Electronic and optical properties of antiferromagnetic iron doped NiO – A first principles study
Antiferromagnetic NiO is a candidate for next generation high-speed and scaled RRAM devices. Here, electronic and optical properties of antiferromagnetic NiO: Fe 25% in the rock salt structure are studied and compared to intrinsic NiO. From density of states and complex dielectric function analysis,...
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doaj-352455bcdbf2460d9a8f1e4e4fbdf02c2020-11-25T02:44:56ZengAIP Publishing LLCAIP Advances2158-32262017-05-0175055711055711-510.1063/1.4975493193791ADVElectronic and optical properties of antiferromagnetic iron doped NiO – A first principles studyJohn E. Petersen0Fidele Twagirayezu1Luisa M. Scolfaro2Pablo D. Borges3Wilhelmus J. Geerts4Department of Physics, Texas State University, San Marcos, Texas 78666, USADepartment of Physics, Texas State University, San Marcos, Texas 78666, USADepartment of Physics, Texas State University, San Marcos, Texas 78666, USAInstituto de Ciências Exatas e Tecnologia, Universidade Federal de Viçosa, 38810-000 Rio Paranaíba, MG, BrazilDepartment of Physics, Texas State University, San Marcos, Texas 78666, USAAntiferromagnetic NiO is a candidate for next generation high-speed and scaled RRAM devices. Here, electronic and optical properties of antiferromagnetic NiO: Fe 25% in the rock salt structure are studied and compared to intrinsic NiO. From density of states and complex dielectric function analysis, the first optical transition is found to be at lower frequency than intrinsic NiO due to an Fe impurity level being the valence band maximum. The resulting effects on refractive index, reflectivity, absorption, optical conductivity and loss function for Fe-doped NiO are compared to those of intrinsic NiO, and notable differences are analyzed. The electronic component of the static dielectric constant of NiO: Fe 25% is calculated to be about 2% less than that of intrinsic NiO.http://dx.doi.org/10.1063/1.4975493 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
John E. Petersen Fidele Twagirayezu Luisa M. Scolfaro Pablo D. Borges Wilhelmus J. Geerts |
spellingShingle |
John E. Petersen Fidele Twagirayezu Luisa M. Scolfaro Pablo D. Borges Wilhelmus J. Geerts Electronic and optical properties of antiferromagnetic iron doped NiO – A first principles study AIP Advances |
author_facet |
John E. Petersen Fidele Twagirayezu Luisa M. Scolfaro Pablo D. Borges Wilhelmus J. Geerts |
author_sort |
John E. Petersen |
title |
Electronic and optical properties of antiferromagnetic iron doped NiO – A first principles study |
title_short |
Electronic and optical properties of antiferromagnetic iron doped NiO – A first principles study |
title_full |
Electronic and optical properties of antiferromagnetic iron doped NiO – A first principles study |
title_fullStr |
Electronic and optical properties of antiferromagnetic iron doped NiO – A first principles study |
title_full_unstemmed |
Electronic and optical properties of antiferromagnetic iron doped NiO – A first principles study |
title_sort |
electronic and optical properties of antiferromagnetic iron doped nio – a first principles study |
publisher |
AIP Publishing LLC |
series |
AIP Advances |
issn |
2158-3226 |
publishDate |
2017-05-01 |
description |
Antiferromagnetic NiO is a candidate for next generation high-speed and scaled RRAM devices. Here, electronic and optical properties of antiferromagnetic NiO: Fe 25% in the rock salt structure are studied and compared to intrinsic NiO. From density of states and complex dielectric function analysis, the first optical transition is found to be at lower frequency than intrinsic NiO due to an Fe impurity level being the valence band maximum. The resulting effects on refractive index, reflectivity, absorption, optical conductivity and loss function for Fe-doped NiO are compared to those of intrinsic NiO, and notable differences are analyzed. The electronic component of the static dielectric constant of NiO: Fe 25% is calculated to be about 2% less than that of intrinsic NiO. |
url |
http://dx.doi.org/10.1063/1.4975493 |
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