Study of the effect of passivation layers on capacitance of AlGaN/GaN heterostructures

Study of the effect of passivation layers on capacitance of AlGaN/GaN heterostructures

MOCVD grown AlGaN/GaN heterostructures on sapphire and silicon substrates have been studied. The capacity–voltage characteristic have been measured in the 200 Hz–1 MHz frequency range with a planar position of mercury and second probe on the specimen surface. The shape of the typical C–V curves for...

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Bibliographic Details
Main Authors: Kira L. Enisherlova, Vladimir G. Goryachev, Tatyana F. Rusak, Semen A. Kapilin
Format: Article
Language:English
Published: Pensoft Publishers 2016-12-01
Series:Modern Electronic Materials
Subjects:
AlGaN/GaN heterostructures
Capacity–voltage characteristic
Frequency measurement
Band diagram
2D electron gas
Dislocation
Rutherford backscattering
Online Access:http://www.sciencedirect.com/science/article/pii/S2452177916300925

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http://www.sciencedirect.com/science/article/pii/S2452177916300925

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