Growing of heteroepitaxial layers on lattice mismatched substrates by the method of scanning liquid phase epitaxy

Heterostructures with lattice mismatched and compositionally different layers are widely used in modern electronic and optoelectronic device engineering. Generally such structures are manufactured by the methods of metal-organic vapor phase epitaxy, metal-organic chemical vapor deposition and molecu...

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Bibliographic Details
Main Authors: Tsybulenko V. V., Shutov S. V.
Format: Article
Language:English
Published: Politehperiodika 2020-12-01
Series:Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
Subjects:
ge
gap
Online Access:http://tkea.com.ua/journalarchive/2020_5-6/6.pdf