Growing of heteroepitaxial layers on lattice mismatched substrates by the method of scanning liquid phase epitaxy

• Main Authors: Tsybulenko V. V., Shutov S. V.
• Format: Article
• Language: English
• Published: Politehperiodika 2020-12-01
• Series: Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
• Subjects: scanning liquid phase epitaxy; high lattice mismatch heterostructures; ge; gap; lattice constant
• Online Access: http://tkea.com.ua/journalarchive/2020_5-6/6.pdf
• ISSN: 2225-5818; 2309-9992

Heterostructures with lattice mismatched and compositionally different layers are widely used in modern electronic and optoelectronic device engineering. Generally such structures are manufactured by the methods of metal-organic vapor phase epitaxy, metal-organic chemical vapor deposition and molecular-beam epitaxy. However, the methods of deposition from a liquid phase are the most inexpensive and simple yet. Thus obtaining the above mentioned heterostructures from a liquid phase is still promising. In this work we demonstrated the possibility of using the method of scanning liquid phase epitaxy to grow continuous heteroepitaxial layers over the substrate surface highly mismatched by lattice constant and having different crystal-chemical properties. By controlling basic parameters of the method we created the conditions close to the solution-melt saturation limit. In other words, we created the conditions of ultra-fast solution-melt cooling and, respectively, high growth rate. We obtained the heterostructures of Ge layers grown on GaP substrates where the lattice mismatch made 3.7%. Gallium was used as the solvent for Germanium. The heterostructure was grown by the method of scanning liquid phase epitaxy in the conditions of ultra-fast initial cooling of the solution-melt. Overcooling at the crystallization front was controlled by an extra heater of the substrate back side. The growing time was 1 and 20 seconds for the two test samples. The layers thickness was determined by the spherical slice technique to be 1.2 and 1.5 μm for these two growing time values, accordingly. We showed that it was possible to obtain more perfect Ge layers on GaP substrate by lowering the growth rate in the final growth stage. This method can be used to grow heterostructures used in creating such modern electronic and optoelectronic devices as structures based on A3B5 compounds and their solid solutions, which cannot be obtained by other classical methods of liquid phase epitaxy due to significant differences in lattice constants and / or crystal-chemical properties.