Gallium Nitride Electrical Characteristics Extraction and Uniformity Sorting
This study examined the output electrical characteristics—current-voltage (I-V) output, threshold voltage, and parasitic capacitance—of novel gallium nitride (GaN) power transistors. Experimental measurements revealed that both enhanced- and depletion-mode GaN field-effect transistors (FETs) contain...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2015-01-01
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| Series: | Journal of Nanomaterials |
| Online Access: | http://dx.doi.org/10.1155/2015/478375 |