Investigation of Performance Silicon Heterojunction Solar Cells Using a-Si: H or a-SiC: H at Emitter Layer Through AMPS-1D Simulations

• Main Authors: Asmaa BENSMAIN, Hadjira TAYOUB, Baya ZEBENTOUT, Zineb BENAMARA
• Format: Article
• Language: English
• Published: IFSA Publishing, S.L. 2014-05-01
• Series: Sensors & Transducers
• Subjects: Heterojunction; AMPS-1D; Solar Cells; a-Si: H/c-Si; a-SiC: H/c-Si.
• Online Access: http://www.sensorsportal.com/HTML/DIGEST/may_2014/Special_issue/P_SI_481.pdf

We offer a numerical simulation tool, AMPS-1D, which allows to model homo- as well as heterojunction devices. AMPS-1D is the short form of automat for simulation of heterostructures. The program solves the one dimensional semiconductor equations in steady-state. Furthermore, a variety of common characterization techniques have been implemented, current- voltage, external quantum efficiency, conduction and valence band. A user-friendly interface allows to easily perform parameter variations, and to visualize and compare your simulations. In this work, The silicon heterojunction cell performances are investigated by detailed described on external quantum efficiency, and light current-voltage characteristics by recognized simulator AMPS-1D (Analysis of Micro- electronics and Photonic Structures). The objective of this work is to study the correlation between the emitter properties of both heterojunction cells a-Si:H/c-Si and a-SiC:H/c-Si (absorption, defect profiles and energy band offsets) and the carrier collection.