Non-volatile spin wave majority gate at the nanoscale
A spin wave majority fork-like structure with feature size of 40 nm, is presented and investigated, through micromagnetic simulations. The structure consists of three merging out-of-plane magnetization spin wave buses and four magneto-electric cells serving as three inputs and an output. The informa...
Main Authors: | , , , , , , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2017-05-01
|
Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.4975693 |
id |
doaj-315dc4f4e2be437d94089a400cc2cf0f |
---|---|
record_format |
Article |
spelling |
doaj-315dc4f4e2be437d94089a400cc2cf0f2020-11-24T20:50:19ZengAIP Publishing LLCAIP Advances2158-32262017-05-0175056020056020-610.1063/1.4975693201791ADVNon-volatile spin wave majority gate at the nanoscaleO. Zografos0S. Dutta1M. Manfrini2A. Vaysset3B. Sorée4A. Naeemi5P. Raghavan6R. Lauwereins7I. P. Radu8IMEC, Kapeldreef 75, B-3001 Leuven, BelgiumDepartment of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USAIMEC, Kapeldreef 75, B-3001 Leuven, BelgiumIMEC, Kapeldreef 75, B-3001 Leuven, BelgiumIMEC, Kapeldreef 75, B-3001 Leuven, BelgiumDepartment of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USAIMEC, Kapeldreef 75, B-3001 Leuven, BelgiumIMEC, Kapeldreef 75, B-3001 Leuven, BelgiumIMEC, Kapeldreef 75, B-3001 Leuven, BelgiumA spin wave majority fork-like structure with feature size of 40 nm, is presented and investigated, through micromagnetic simulations. The structure consists of three merging out-of-plane magnetization spin wave buses and four magneto-electric cells serving as three inputs and an output. The information of the logic signals is encoded in the phase of the transmitted spin waves and subsequently stored as direction of magnetization of the magneto-electric cells upon detection. The minimum dimensions of the structure that produce an operational majority gate are identified. For all input combinations, the detection scheme employed manages to capture the majority phase result of the spin wave interference and ignore all reflection effects induced by the geometry of the structure.http://dx.doi.org/10.1063/1.4975693 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
O. Zografos S. Dutta M. Manfrini A. Vaysset B. Sorée A. Naeemi P. Raghavan R. Lauwereins I. P. Radu |
spellingShingle |
O. Zografos S. Dutta M. Manfrini A. Vaysset B. Sorée A. Naeemi P. Raghavan R. Lauwereins I. P. Radu Non-volatile spin wave majority gate at the nanoscale AIP Advances |
author_facet |
O. Zografos S. Dutta M. Manfrini A. Vaysset B. Sorée A. Naeemi P. Raghavan R. Lauwereins I. P. Radu |
author_sort |
O. Zografos |
title |
Non-volatile spin wave majority gate at the nanoscale |
title_short |
Non-volatile spin wave majority gate at the nanoscale |
title_full |
Non-volatile spin wave majority gate at the nanoscale |
title_fullStr |
Non-volatile spin wave majority gate at the nanoscale |
title_full_unstemmed |
Non-volatile spin wave majority gate at the nanoscale |
title_sort |
non-volatile spin wave majority gate at the nanoscale |
publisher |
AIP Publishing LLC |
series |
AIP Advances |
issn |
2158-3226 |
publishDate |
2017-05-01 |
description |
A spin wave majority fork-like structure with feature size of 40 nm, is presented and investigated, through micromagnetic simulations. The structure consists of three merging out-of-plane magnetization spin wave buses and four magneto-electric cells serving as three inputs and an output. The information of the logic signals is encoded in the phase of the transmitted spin waves and subsequently stored as direction of magnetization of the magneto-electric cells upon detection. The minimum dimensions of the structure that produce an operational majority gate are identified. For all input combinations, the detection scheme employed manages to capture the majority phase result of the spin wave interference and ignore all reflection effects induced by the geometry of the structure. |
url |
http://dx.doi.org/10.1063/1.4975693 |
work_keys_str_mv |
AT ozografos nonvolatilespinwavemajoritygateatthenanoscale AT sdutta nonvolatilespinwavemajoritygateatthenanoscale AT mmanfrini nonvolatilespinwavemajoritygateatthenanoscale AT avaysset nonvolatilespinwavemajoritygateatthenanoscale AT bsoree nonvolatilespinwavemajoritygateatthenanoscale AT anaeemi nonvolatilespinwavemajoritygateatthenanoscale AT praghavan nonvolatilespinwavemajoritygateatthenanoscale AT rlauwereins nonvolatilespinwavemajoritygateatthenanoscale AT ipradu nonvolatilespinwavemajoritygateatthenanoscale |
_version_ |
1716804037119049728 |