Hysteresis in Lanthanide Zirconium Oxides Observed Using a Pulse CV Technique and including the Effect of High Temperature Annealing

Hysteresis in Lanthanide Zirconium Oxides Observed Using a Pulse CV Technique and including the Effect of High Temperature Annealing

A powerful characterization technique, pulse capacitance-voltage (CV) technique, was used to investigate oxide traps before and after annealing for lanthanide zirconium oxide thin films deposited on n-type Si (111) substrates at 300 °C by liquid injection Atomic Layer Deposition (ALD). The results i...

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Bibliographic Details
Main Authors: Qifeng Lu, Chun Zhao, Yifei Mu, Ce Zhou Zhao, Stephen Taylor, Paul R. Chalker
Format: Article
Language:English
Published: MDPI AG 2015-07-01
Series:Materials
Subjects:
pulse capacitance-voltage
lanthanide zirconium oxide
oxide traps
high temperature annealing
Online Access:http://www.mdpi.com/1996-1944/8/8/4829

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