Origin of the Electroluminescence from Annealed-ZnO/GaN Heterojunction Light-Emitting Diodes

Origin of the Electroluminescence from Annealed-ZnO/GaN Heterojunction Light-Emitting Diodes

This paper addressed the effect of post-annealed treatment on the electroluminescence (EL) of an n-ZnO/p-GaN heterojunction light-emitting diode (LED). The bluish light emitted from the 450 °C-annealed LED became reddish as the LED annealed at a temperature of 800 °C under vacuum atmosphere. The ori...

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Bibliographic Details
Main Authors: Kai-Chiang Hsu, Wei-Hua Hsiao, Ching-Ting Lee, Yan-Ting Chen, Day-Shan Liu
Format: Article
Language:English
Published: MDPI AG 2015-11-01
Series:Materials
Subjects:
electroluminescence
n-ZnO/p-GaN heterojunction
light-emitting diode
photoluminescence
AES depth profile
Online Access:http://www.mdpi.com/1996-1944/8/11/5417

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