Modeling of Semiconductor Electrostatic Qubits Realized Through Coupled Quantum Dots

• Main Authors: Panagiotis Giounanlis, Elena Blokhina, Krzysztof Pomorski, Dirk R. Leipold, Robert Bogdan Staszewski
• Format: Article
• Language: English
• Published: IEEE 2019-01-01
• Series: IEEE Access
• Subjects: CMOS technology; electrostatic semiconductor qubit; coupled semiconductor quantum dot; <italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">N</italic>-well system; decoherence time; time-dependent Schrödinger equation
• Online Access: https://ieeexplore.ieee.org/document/8681511/

Considering the enormous advances in nanometer-scale CMOS technology that now allows one to reliably fabricate billions of switching devices on a single silicon die, electrostatically controlled quantum dots (implemented as quantum wells) appear to be promising candidates for a massive implementation of quantum bits (qubits) and quantum logic circuits in order to facilitate high-volume production of quantum computers. In this paper, the case of finite two-well and multiple-well potentials arising from semiconductor charged-coupled structures are treated in a rigorous way by Schro&#x0308;dinger formalism. The modeling methodologies presented to allow one to describe the dynamics of quantum states in non-ideal geometries, account for some mechanisms of qubit decoherence and model electrostatic interaction between electrons that lead to entanglement. The presented methodology can be scaled up to circuits of greater complexity.