A sub-500 mV monolayer hexagonal boron nitride based memory device

A sub-500 mV monolayer hexagonal boron nitride based memory device

The recent discovery of memristive devices based on two-dimensional materials have attracted much interest for emerging applications on flexible memory, neuromorphic computing, and so forth. Reducing the thickness to a single-layer level would prompt the scaling limit to sub-nanometer. However, mono...

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Bibliographic Details
Main Authors: Jun Ge, Haiming Huang, Zelin Ma, Weilong Chen, Xucheng Cao, Huaheng Fang, Jianfeng Yan, Zhiyu Liu, Weiliang Wang, Shusheng Pan
Format: Article
Language:English
Published: Elsevier 2021-01-01
Series:Materials & Design
Subjects:
Nonvolatile memory
Boron nitride
Resistive switching
Monolayer
Low operating voltage
Online Access:http://www.sciencedirect.com/science/article/pii/S0264127520309023

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