Investigation on Ge surface diffusion via growing Ge quantum dots on top of Si pillars

Investigation on Ge surface diffusion via growing Ge quantum dots on top of Si pillars

We report on a simple and intuitionistic experimental method to quantitatively measure surface diffusion lengths of Ge adatoms on Si(001) substrates and its activation energy Ea, which is achieved by growing Ge quantum dots (QDs) on top surfaces of Si pillars with different radii and taking an advan...

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Bibliographic Details
Main Authors: Yuwen Jiang, Delin Mo, Xiaofeng Hu, Shuguang Wang, Yulu Chen, Dongdong Lin, Yongliang Fan, Xinju Yang, Zhengyang Zhong, Zuimin Jiang
Format: Article
Language:English
Published: AIP Publishing LLC 2016-08-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4961992

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