A Two-Step Annealing Method to Enhance the Pyroelectric Properties of Mn:PIMNT Chips for Infrared Detectors

A Two-Step Annealing Method to Enhance the Pyroelectric Properties of Mn:PIMNT Chips for Infrared Detectors

Mn:0.15Pb(In<sub>1/2</sub>Nb<sub>1/2</sub>)O<sub>3</sub>-0.55Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>-0.30PbTiO<sub>3</sub> (Mn:PIMNT) pyroelectric chips were prepared by a two-step annealing method. For the...

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Main Authors: Rongfeng Zhu, Jing Zhao, Jianwei Chen, Bijun Fang, Haiqing Xu, Wenning Di, Jie Jiao, Xi’an Wang, Haosu Luo
Format: Article
Language:English
Published: MDPI AG 2020-06-01
Series:Materials
Subjects:
Mn:PIMNT crystals
two-step annealing
defects
surface stress
infrared detectors
Online Access:https://www.mdpi.com/1996-1944/13/11/2562
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spelling doaj-2f7102c853bc4d87afc3c0c973f938fb2020-11-25T03:20:14ZengMDPI AGMaterials1996-19442020-06-01132562256210.3390/ma13112562A Two-Step Annealing Method to Enhance the Pyroelectric Properties of Mn:PIMNT Chips for Infrared DetectorsRongfeng Zhu0Jing Zhao1Jianwei Chen2Bijun Fang3Haiqing Xu4Wenning Di5Jie Jiao6Xi’an Wang7Haosu Luo8Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, ChinaKey Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, ChinaKey Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, ChinaSchool of Materials Science and Engineering, Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Jiangsu Province Cultivation Base for State Key Laboratory of Photovoltaic Science and Technology, National Experimental Demonstration Center for Materials Science and Engineering, Changzhou University, Changzhou 213164, ChinaKey Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, ChinaKey Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, ChinaKey Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, ChinaKey Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, ChinaKey Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, ChinaMn:0.15Pb(In<sub>1/2</sub>Nb<sub>1/2</sub>)O<sub>3</sub>-0.55Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>-0.30PbTiO<sub>3</sub> (Mn:PIMNT) pyroelectric chips were prepared by a two-step annealing method. For the two steps, annealing temperatures dependence of microstructure, defects, surface stress, surface roughness, dielectric properties and pyroelectric properties were studied comprehensively. The controlling factors influencing the pyroelectric properties of the Mn:PIMNT crystals were analyzed and the optimum annealing temperature ranges for the two steps were determined: 600–700 °C for the first step and 500–600 °C for the second step. The pyroelectric properties of the thin Mn:PIMNT chips were significantly enhanced by the two-step annealing method via tuning oxygen vacancies and eliminating surface stress. Based on Mn:PIMNT pyroelectric chips annealed at the most favorable conditions (annealed at 600 °C for the first step and 500 °C for the second step), infrared detectors were prepared with specific detectivity <i>D* </i>= 1.63 × 10<sup>9</sup> cmHz<sup>1/2</sup>W<sup>−1</sup>, nearly three times higher than in commercial LiTaO<sub>3</sub> detectors.https://www.mdpi.com/1996-1944/13/11/2562Mn:PIMNT crystalstwo-step annealingdefectssurface stressinfrared detectors
collection DOAJ
language English
format Article
sources DOAJ
author Rongfeng Zhu
Jing Zhao
Jianwei Chen
Bijun Fang
Haiqing Xu
Wenning Di
Jie Jiao
Xi’an Wang
Haosu Luo
spellingShingle Rongfeng Zhu
Jing Zhao
Jianwei Chen
Bijun Fang
Haiqing Xu
Wenning Di
Jie Jiao
Xi’an Wang
Haosu Luo
A Two-Step Annealing Method to Enhance the Pyroelectric Properties of Mn:PIMNT Chips for Infrared Detectors
Materials
Mn:PIMNT crystals
two-step annealing
defects
surface stress
infrared detectors
author_facet Rongfeng Zhu
Jing Zhao
Jianwei Chen
Bijun Fang
Haiqing Xu
Wenning Di
Jie Jiao
Xi’an Wang
Haosu Luo
author_sort Rongfeng Zhu
title A Two-Step Annealing Method to Enhance the Pyroelectric Properties of Mn:PIMNT Chips for Infrared Detectors
title_short A Two-Step Annealing Method to Enhance the Pyroelectric Properties of Mn:PIMNT Chips for Infrared Detectors
title_full A Two-Step Annealing Method to Enhance the Pyroelectric Properties of Mn:PIMNT Chips for Infrared Detectors
title_fullStr A Two-Step Annealing Method to Enhance the Pyroelectric Properties of Mn:PIMNT Chips for Infrared Detectors
title_full_unstemmed A Two-Step Annealing Method to Enhance the Pyroelectric Properties of Mn:PIMNT Chips for Infrared Detectors
title_sort two-step annealing method to enhance the pyroelectric properties of mn:pimnt chips for infrared detectors
publisher MDPI AG
series Materials
issn 1996-1944
publishDate 2020-06-01
description Mn:0.15Pb(In<sub>1/2</sub>Nb<sub>1/2</sub>)O<sub>3</sub>-0.55Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>-0.30PbTiO<sub>3</sub> (Mn:PIMNT) pyroelectric chips were prepared by a two-step annealing method. For the two steps, annealing temperatures dependence of microstructure, defects, surface stress, surface roughness, dielectric properties and pyroelectric properties were studied comprehensively. The controlling factors influencing the pyroelectric properties of the Mn:PIMNT crystals were analyzed and the optimum annealing temperature ranges for the two steps were determined: 600–700 °C for the first step and 500–600 °C for the second step. The pyroelectric properties of the thin Mn:PIMNT chips were significantly enhanced by the two-step annealing method via tuning oxygen vacancies and eliminating surface stress. Based on Mn:PIMNT pyroelectric chips annealed at the most favorable conditions (annealed at 600 °C for the first step and 500 °C for the second step), infrared detectors were prepared with specific detectivity <i>D* </i>= 1.63 × 10<sup>9</sup> cmHz<sup>1/2</sup>W<sup>−1</sup>, nearly three times higher than in commercial LiTaO<sub>3</sub> detectors.
topic Mn:PIMNT crystals
two-step annealing
defects
surface stress
infrared detectors
url https://www.mdpi.com/1996-1944/13/11/2562
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