Superior unipolar resistive switching in stacked ZrOx/ZrO2/ZrOx structure
This study investigates the performance of unipolar-switched ZrO2 RRAM, using an oxygen-deficient and amorphous ZrOx capping in a sandwich stack Al/ZrOx/ZrO2/ZrOx/Al structure. Superior high and low resistance switching and a resistance ratio (HRS/LRS) greater than 10 showed excellent dc endurance o...
Main Authors: | Cheng-Li Lin, Tse-Yu Lin |
---|---|
Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2016-03-01
|
Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.4943508 |
Similar Items
-
Application and characteristic analysis of ZrOx films
by: Wei-Chung Chen, et al.
Published: (2009) -
Characterization of Switching in ZrOx /HfOx Bi-layer RRAM Devices
by: Yueh-Po Lu, et al.
Published: (2011) -
The study of HfOx and ZrOx thin film Application to GaN Optoelectronic Devices
by: Chun-lin Yeh, et al.
Published: (2009) -
Dependence of the dielectric property of Mg-doped ZrOx films upon Mg content
by: 李聰明
Published: (2011) -
Preparation and Characterization of Forming-Free ZrOx-Based Thin Films for Resistive Switching Nonvolatile Memory Devices
by: Berhanu-Tulu Kacha, et al.
Published: (2014)