The Impact of LCE and PAMDLE Regarding Different CMOS ICs Nodes and High Temperatures

The Impact of LCE and PAMDLE Regarding Different CMOS ICs Nodes and High Temperatures

This paper describes the influence of Longitudinal Corner Effect (LCE effect) and PArallel Connection of Metal–Oxide–Semiconductor Field-Effect Transistors (MOSFETs) with Different Channel Lengths Effect (PAMDLE effect) of Diamond (hexagonal gate shape) MOSFET in different Comp...

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Bibliographic Details
Main Authors: Egon Henrique Salerno Galembeck, Christian Renaux, Jacobus Willibrordus Swart, Denis Flandre, Salvador Pinillos Gimenez
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Diamond layout style for MOSFET
High temperature
LCE
PAMDLE
Online Access:https://ieeexplore.ieee.org/document/9397259/

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