Ohmic contacts to InN-based materials
The key aspects of ohmic contact formation to InN-based materials were investigated. Detailed analysis of studies conducted over the past three decades, allows determining the basic principles of such contacts. The contact structure properties and optimal conditions for them are presented. Different...
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Politehperiodika
2016-10-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
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| Online Access: | http://www.tkea.com.ua/tkea/2016/4-5_2016/pdf/01.pdf |
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doaj-2ed1e6c230924a6aae0870aad50304cd2020-11-24T21:39:16ZengPolitehperiodikaTekhnologiya i Konstruirovanie v Elektronnoi Apparature2225-58182309-99922016-10-014-531410.15222/TKEA2016.4-5.03Ohmic contacts to InN-based materialsSai P. O. 0Ukraine, Kyiv, V. E. Lashkaryov Institute of Semiconductor Physics of NAS of UkraineThe key aspects of ohmic contact formation to InN-based materials were investigated. Detailed analysis of studies conducted over the past three decades, allows determining the basic principles of such contacts. The contact structure properties and optimal conditions for them are presented. Different types of metallization are considered, the advantages and disadvantages of each are determined, including the basic requirements that such contact must meet. There is emphasis on the using multilayer metallization with the barrier layers. In the case of the InAlN/GaN systems, the general approaches of forming ohmic contacts were considered. http://www.tkea.com.ua/tkea/2016/4-5_2016/pdf/01.pdfohmic contactIndium Nitridecontact resistivityrapid thermal annealing |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Sai P. O. |
| spellingShingle |
Sai P. O. Ohmic contacts to InN-based materials Tekhnologiya i Konstruirovanie v Elektronnoi Apparature ohmic contact Indium Nitride contact resistivity rapid thermal annealing |
| author_facet |
Sai P. O. |
| author_sort |
Sai P. O. |
| title |
Ohmic contacts to InN-based materials |
| title_short |
Ohmic contacts to InN-based materials |
| title_full |
Ohmic contacts to InN-based materials |
| title_fullStr |
Ohmic contacts to InN-based materials |
| title_full_unstemmed |
Ohmic contacts to InN-based materials |
| title_sort |
ohmic contacts to inn-based materials |
| publisher |
Politehperiodika |
| series |
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| issn |
2225-5818 2309-9992 |
| publishDate |
2016-10-01 |
| description |
The key aspects of ohmic contact formation to InN-based materials were investigated. Detailed analysis of studies conducted over the past three decades, allows determining the basic principles of such contacts. The contact structure properties and optimal conditions for them are presented. Different types of metallization are considered, the advantages and disadvantages of each are determined, including the basic requirements that such contact must meet. There is emphasis on the using multilayer metallization with the barrier layers. In the case of the InAlN/GaN systems, the general approaches of forming ohmic contacts were considered. |
| topic |
ohmic contact Indium Nitride contact resistivity rapid thermal annealing |
| url |
http://www.tkea.com.ua/tkea/2016/4-5_2016/pdf/01.pdf |
| work_keys_str_mv |
AT saipo ohmiccontactstoinnbasedmaterials |
| _version_ |
1725931622752059392 |