Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity
Based on contactless carrier lifetime measurements performed on p-type boron-doped Czochralski-grown silicon (Cz-Si) wafers, we examine the rate constant Rde of the permanent deactivation process of the boron-oxygen-related defect center as a function of the illumination intensity I at 170°C. While...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2017-03-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4978266 |