RESEARCH OF INTERRELATION OF A DESIGN AND MANUFACTURING TECHNIQUES OF SEMI-CONDUCTOR DEVICES WITH THEIR PENETRATIVE PRESSURE

RESEARCH OF INTERRELATION OF A DESIGN AND MANUFACTURING TECHNIQUES OF SEMI-CONDUCTOR DEVICES WITH THEIR PENETRATIVE PRESSURE

The estimation of influence of a design and technology of formation of transistor structure on value of penetrative pressure is spent. Dependences in SAD TCAD Synopsys for penetrative pressure from size of a superficial charge of various designs of the transistor are received.

Bibliographic Details
Main Author: A. R. Shakhmaeva
Format: Article
Language:Russian
Published: Daghestan State Technical University 2016-07-01
Series:Vestnik Dagestanskogo Gosudarstvennogo Tehničeskogo Universiteta: Tehničeskie Nauki
Subjects:
the transistor
breakdown
penetrative pressure
superficial charge
security ring
Online Access:https://vestnik.dgtu.ru/jour/article/view/24
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spelling doaj-2ebfe59da3584882b1bf502c3271087c2021-07-28T20:54:32ZrusDaghestan State Technical UniversityVestnik Dagestanskogo Gosudarstvennogo Tehničeskogo Universiteta: Tehničeskie Nauki 2073-61852542-095X2016-07-01281263110.21822/2073-6185-2013-0-1(28)-26-3123RESEARCH OF INTERRELATION OF A DESIGN AND MANUFACTURING TECHNIQUES OF SEMI-CONDUCTOR DEVICES WITH THEIR PENETRATIVE PRESSUREA. R. ShakhmaevaThe estimation of influence of a design and technology of formation of transistor structure on value of penetrative pressure is spent. Dependences in SAD TCAD Synopsys for penetrative pressure from size of a superficial charge of various designs of the transistor are received.https://vestnik.dgtu.ru/jour/article/view/24the transistorbreakdownpenetrative pressuresuperficial chargesecurity ring
collection DOAJ
language Russian
format Article
sources DOAJ
author A. R. Shakhmaeva
spellingShingle A. R. Shakhmaeva
RESEARCH OF INTERRELATION OF A DESIGN AND MANUFACTURING TECHNIQUES OF SEMI-CONDUCTOR DEVICES WITH THEIR PENETRATIVE PRESSURE
Vestnik Dagestanskogo Gosudarstvennogo Tehničeskogo Universiteta: Tehničeskie Nauki
the transistor
breakdown
penetrative pressure
superficial charge
security ring
author_facet A. R. Shakhmaeva
author_sort A. R. Shakhmaeva
title RESEARCH OF INTERRELATION OF A DESIGN AND MANUFACTURING TECHNIQUES OF SEMI-CONDUCTOR DEVICES WITH THEIR PENETRATIVE PRESSURE
title_short RESEARCH OF INTERRELATION OF A DESIGN AND MANUFACTURING TECHNIQUES OF SEMI-CONDUCTOR DEVICES WITH THEIR PENETRATIVE PRESSURE
title_full RESEARCH OF INTERRELATION OF A DESIGN AND MANUFACTURING TECHNIQUES OF SEMI-CONDUCTOR DEVICES WITH THEIR PENETRATIVE PRESSURE
title_fullStr RESEARCH OF INTERRELATION OF A DESIGN AND MANUFACTURING TECHNIQUES OF SEMI-CONDUCTOR DEVICES WITH THEIR PENETRATIVE PRESSURE
title_full_unstemmed RESEARCH OF INTERRELATION OF A DESIGN AND MANUFACTURING TECHNIQUES OF SEMI-CONDUCTOR DEVICES WITH THEIR PENETRATIVE PRESSURE
title_sort research of interrelation of a design and manufacturing techniques of semi-conductor devices with their penetrative pressure
publisher Daghestan State Technical University
series Vestnik Dagestanskogo Gosudarstvennogo Tehničeskogo Universiteta: Tehničeskie Nauki
issn 2073-6185
2542-095X
publishDate 2016-07-01
description The estimation of influence of a design and technology of formation of transistor structure on value of penetrative pressure is spent. Dependences in SAD TCAD Synopsys for penetrative pressure from size of a superficial charge of various designs of the transistor are received.
topic the transistor
breakdown
penetrative pressure
superficial charge
security ring
url https://vestnik.dgtu.ru/jour/article/view/24
work_keys_str_mv AT arshakhmaeva researchofinterrelationofadesignandmanufacturingtechniquesofsemiconductordeviceswiththeirpenetrativepressure
_version_ 1721264801254998016

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