Fabrication and Characterization of Planar-Type Top-Illuminated InP-Based Avalanche Photodetector on Conductive Substrate with Operating Speeds Exceeding 10 Gbps

Fabrication and Characterization of Planar-Type Top-Illuminated InP-Based Avalanche Photodetector on Conductive Substrate with Operating Speeds Exceeding 10 Gbps

This paper presents a high-speed top-illuminated InP-based avalanche photodetector (APD) fabricated on conductive InP-wafer using planar processes. The proposed device was then evaluated in terms of DC and dynamic performance characteristics. The design is based on a separate absorption, grading, ch...

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Bibliographic Details
Main Authors: Jheng-Jie Liu, Wen-Jeng Ho, Cho-Chun Chiang, Chi-Jen Teng, Chia-Chun Yu, Yen-Chu Li
Format: Article
Language:English
Published: MDPI AG 2018-08-01
Series:Sensors
Subjects:
avalanche photodetector (APD)
separate absorption
grading
charge and multiplication (SAGCM)
multiplication gain
modulation frequency
eye diagram
Online Access:http://www.mdpi.com/1424-8220/18/9/2800

Internet

http://www.mdpi.com/1424-8220/18/9/2800

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