High spectro-temporal compression on a nonlinear CMOS-chip

• Main Authors: Ju Won Choi, Ezgi Sahin, Byoung-Uk Sohn, George F. R. Chen, Doris K. T. Ng, Anuradha M. Agarwal, Lionel C. Kimerling, Dawn T. H. Tan
• Format: Article
• Language: English
• Published: Nature Publishing Group 2021-06-01
• Series: Light: Science & Applications
• Online Access: https://doi.org/10.1038/s41377-021-00572-z

Abstract Optical pulses are fundamentally defined by their temporal and spectral properties. The ability to control pulse properties allows practitioners to efficiently leverage them for advanced metrology, high speed optical communications and attosecond science. Here, we report 11× temporal compression of 5.8 ps pulses to 0.55 ps using a low power of 13.3 W. The result is accompanied by a significant increase in the pulse peak power by 9.4×. These results represent the strongest temporal compression demonstrated to date on a complementary metal–oxide–semiconductor (CMOS) chip. In addition, we report the first demonstration of on-chip spectral compression, 3.0× spectral compression of 480 fs pulses, importantly while preserving the pulse energy. The strong compression achieved at low powers harnesses advanced on-chip device design, and the strong nonlinear properties of backend-CMOS compatible ultra-silicon-rich nitride, which possesses absence of two-photon absorption and 500× larger nonlinear parameter than in stoichiometric silicon nitride waveguides. The demonstrated work introduces an important new paradigm for spectro-temporal compression of optical pulses toward turn-key, on-chip integrated systems for all-optical pulse control.