AlGaN-Based Multiple Quantum Well Deep Ultraviolet Light-Emitting Diodes With Polarization Doping

AlGaN-Based Multiple Quantum Well Deep Ultraviolet Light-Emitting Diodes With Polarization Doping

The characteristics of AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) with polarization-doped p-type layers were numerically analyzed. The energy band diagrams, carrier distributions in the multiple quantum wells (MQWs) and the p-type regions, electroluminescence spectra, current-ve...

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Main Authors: Jianjun Chang, Dunjun Chen, Junjun Xue, Kexiu Dong, Bin Liu, Hai Lu, Rong Zhang, Youdou Zheng
Format: Article
Language:English
Published: IEEE 2016-01-01
Series:IEEE Photonics Journal
Online Access:https://ieeexplore.ieee.org/document/7386792/
id doaj-2e38b6af102d4d4493ce0d5eaeaa0db2
record_format Article
spelling doaj-2e38b6af102d4d4493ce0d5eaeaa0db22021-03-29T17:29:08ZengIEEEIEEE Photonics Journal1943-06552016-01-01811710.1109/JPHOT.2016.25162577386792AlGaN-Based Multiple Quantum Well Deep Ultraviolet Light-Emitting Diodes With Polarization DopingJianjun Chang0Dunjun Chen1Junjun Xue2Kexiu Dong3Bin Liu4Hai Lu5Rong Zhang6Youdou Zheng7Key Lab. of Adv. Photonic & Electron. Mater., Nanjing Univ., Nanjing, ChinaKey Lab. of Adv. Photonic & Electron. Mater., Nanjing Univ., Nanjing, ChinaKey Lab. of Adv. Photonic & Electron. Mater., Nanjing Univ., Nanjing, ChinaSch. of Mech. & Electron. Eng., Chuzhou Univ., Chuzhou, ChinaKey Lab. of Adv. Photonic & Electron. Mater., Nanjing Univ., Nanjing, ChinaKey Lab. of Adv. Photonic & Electron. Mater., Nanjing Univ., Nanjing, ChinaKey Lab. of Adv. Photonic & Electron. Mater., Nanjing Univ., Nanjing, ChinaKey Lab. of Adv. Photonic & Electron. Mater., Nanjing Univ., Nanjing, ChinaThe characteristics of AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) with polarization-doped p-type layers were numerically analyzed. The energy band diagrams, carrier distributions in the multiple quantum wells (MQWs) and the p-type regions, electroluminescence spectra, current-versus-voltage (I-V) curves, and radiative recombination rates in MQWs, were investigated. The results indicate that DUV LEDs with polarization-doped p-type layers have lower electron leakage, better hole injection efficiency, and higher lighting emission intensity over conventional DUV LEDs. The results also reveal a significant improvement on these characteristics by increasing the Al content of the last quantum barrier in polarization-doped DUV LEDs.https://ieeexplore.ieee.org/document/7386792/
collection DOAJ
language English
format Article
sources DOAJ
author Jianjun Chang
Dunjun Chen
Junjun Xue
Kexiu Dong
Bin Liu
Hai Lu
Rong Zhang
Youdou Zheng
spellingShingle Jianjun Chang
Dunjun Chen
Junjun Xue
Kexiu Dong
Bin Liu
Hai Lu
Rong Zhang
Youdou Zheng
AlGaN-Based Multiple Quantum Well Deep Ultraviolet Light-Emitting Diodes With Polarization Doping
IEEE Photonics Journal
author_facet Jianjun Chang
Dunjun Chen
Junjun Xue
Kexiu Dong
Bin Liu
Hai Lu
Rong Zhang
Youdou Zheng
author_sort Jianjun Chang
title AlGaN-Based Multiple Quantum Well Deep Ultraviolet Light-Emitting Diodes With Polarization Doping
title_short AlGaN-Based Multiple Quantum Well Deep Ultraviolet Light-Emitting Diodes With Polarization Doping
title_full AlGaN-Based Multiple Quantum Well Deep Ultraviolet Light-Emitting Diodes With Polarization Doping
title_fullStr AlGaN-Based Multiple Quantum Well Deep Ultraviolet Light-Emitting Diodes With Polarization Doping
title_full_unstemmed AlGaN-Based Multiple Quantum Well Deep Ultraviolet Light-Emitting Diodes With Polarization Doping
title_sort algan-based multiple quantum well deep ultraviolet light-emitting diodes with polarization doping
publisher IEEE
series IEEE Photonics Journal
issn 1943-0655
publishDate 2016-01-01
description The characteristics of AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) with polarization-doped p-type layers were numerically analyzed. The energy band diagrams, carrier distributions in the multiple quantum wells (MQWs) and the p-type regions, electroluminescence spectra, current-versus-voltage (I-V) curves, and radiative recombination rates in MQWs, were investigated. The results indicate that DUV LEDs with polarization-doped p-type layers have lower electron leakage, better hole injection efficiency, and higher lighting emission intensity over conventional DUV LEDs. The results also reveal a significant improvement on these characteristics by increasing the Al content of the last quantum barrier in polarization-doped DUV LEDs.
url https://ieeexplore.ieee.org/document/7386792/
work_keys_str_mv AT jianjunchang alganbasedmultiplequantumwelldeepultravioletlightemittingdiodeswithpolarizationdoping
AT dunjunchen alganbasedmultiplequantumwelldeepultravioletlightemittingdiodeswithpolarizationdoping
AT junjunxue alganbasedmultiplequantumwelldeepultravioletlightemittingdiodeswithpolarizationdoping
AT kexiudong alganbasedmultiplequantumwelldeepultravioletlightemittingdiodeswithpolarizationdoping
AT binliu alganbasedmultiplequantumwelldeepultravioletlightemittingdiodeswithpolarizationdoping
AT hailu alganbasedmultiplequantumwelldeepultravioletlightemittingdiodeswithpolarizationdoping
AT rongzhang alganbasedmultiplequantumwelldeepultravioletlightemittingdiodeswithpolarizationdoping
AT youdouzheng alganbasedmultiplequantumwelldeepultravioletlightemittingdiodeswithpolarizationdoping
_version_ 1724197704857288704

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