AlGaN-Based Multiple Quantum Well Deep Ultraviolet Light-Emitting Diodes With Polarization Doping

AlGaN-Based Multiple Quantum Well Deep Ultraviolet Light-Emitting Diodes With Polarization Doping

The characteristics of AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) with polarization-doped p-type layers were numerically analyzed. The energy band diagrams, carrier distributions in the multiple quantum wells (MQWs) and the p-type regions, electroluminescence spectra, current-ve...

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Bibliographic Details
Main Authors: Jianjun Chang, Dunjun Chen, Junjun Xue, Kexiu Dong, Bin Liu, Hai Lu, Rong Zhang, Youdou Zheng
Format: Article
Language:English
Published: IEEE 2016-01-01
Series:IEEE Photonics Journal
Online Access:https://ieeexplore.ieee.org/document/7386792/
Description
Summary:The characteristics of AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) with polarization-doped p-type layers were numerically analyzed. The energy band diagrams, carrier distributions in the multiple quantum wells (MQWs) and the p-type regions, electroluminescence spectra, current-versus-voltage (I-V) curves, and radiative recombination rates in MQWs, were investigated. The results indicate that DUV LEDs with polarization-doped p-type layers have lower electron leakage, better hole injection efficiency, and higher lighting emission intensity over conventional DUV LEDs. The results also reveal a significant improvement on these characteristics by increasing the Al content of the last quantum barrier in polarization-doped DUV LEDs.
ISSN:1943-0655

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