Improved performance of GaN based light emitting diodes with ex-situ sputtered AlN nucleation layers
The crystal quality, electrical and optical properties of GaN based light emitting diodes (LEDs) with ex-situ sputtered physical vapor deposition (PVD) aluminum nitride (AlN) nucleation layers were investigated. It was found that the crystal quality in terms of defect density and x-ray diffraction l...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2016-04-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4947299 |