Origin of resistance state relaxation and nonvolatile features in NiO films: Interfacial vs filamentary resistive switching

Origin of resistance state relaxation and nonvolatile features in NiO films: Interfacial vs filamentary resistive switching

NiO films grown on Pt and Nb:SrTiO3 (NSTO) substrates display filament-type and interface-type resistance switching (RS), respectively. The resistance retention studies show that these two different RSs also lead to distinct resistance evolutions. For Pt/NiO/Pt, both high and low resistance states h...

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Main Authors: Wanying Xia, Xianwen Sun, Yanfeng Yin, Caihong Jia, Guoqiang Li, Weifeng Zhang
Format: Article
Language:English
Published: AIP Publishing LLC 2020-10-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0007173
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spelling doaj-2d2ab874517f430283a64088c7834c302020-11-25T04:05:20ZengAIP Publishing LLCAIP Advances2158-32262020-10-011010105319105319-510.1063/5.0007173Origin of resistance state relaxation and nonvolatile features in NiO films: Interfacial vs filamentary resistive switchingWanying Xia0Xianwen Sun1Yanfeng Yin2Caihong Jia3Guoqiang Li4Weifeng Zhang5Henan Key Laboratory of Photovoltaic Materials and School of Physics and Electronics, Henan University, Kaifeng 475004, People’s Republic of ChinaHenan Key Laboratory of Photovoltaic Materials and School of Physics and Electronics, Henan University, Kaifeng 475004, People’s Republic of ChinaHenan Key Laboratory of Photovoltaic Materials and School of Physics and Electronics, Henan University, Kaifeng 475004, People’s Republic of ChinaHenan Key Laboratory of Photovoltaic Materials and School of Physics and Electronics, Henan University, Kaifeng 475004, People’s Republic of ChinaHenan Key Laboratory of Photovoltaic Materials and School of Physics and Electronics, Henan University, Kaifeng 475004, People’s Republic of ChinaHenan Key Laboratory of Photovoltaic Materials and School of Physics and Electronics, Henan University, Kaifeng 475004, People’s Republic of ChinaNiO films grown on Pt and Nb:SrTiO3 (NSTO) substrates display filament-type and interface-type resistance switching (RS), respectively. The resistance retention studies show that these two different RSs also lead to distinct resistance evolutions. For Pt/NiO/Pt, both high and low resistance states have good retention property, demonstrating that the conducting filament is stable once it is formed. However, for Pt/NiO/NSTO/In, all resistance states show time-relaxation, and the relaxation trend depends on the polarity of the write bias. The resistive relaxation and nonvolatile features are attributed to the charge migration and electron trapping scenario, respectively.http://dx.doi.org/10.1063/5.0007173
collection DOAJ
language English
format Article
sources DOAJ
author Wanying Xia
Xianwen Sun
Yanfeng Yin
Caihong Jia
Guoqiang Li
Weifeng Zhang
spellingShingle Wanying Xia
Xianwen Sun
Yanfeng Yin
Caihong Jia
Guoqiang Li
Weifeng Zhang
Origin of resistance state relaxation and nonvolatile features in NiO films: Interfacial vs filamentary resistive switching
AIP Advances
author_facet Wanying Xia
Xianwen Sun
Yanfeng Yin
Caihong Jia
Guoqiang Li
Weifeng Zhang
author_sort Wanying Xia
title Origin of resistance state relaxation and nonvolatile features in NiO films: Interfacial vs filamentary resistive switching
title_short Origin of resistance state relaxation and nonvolatile features in NiO films: Interfacial vs filamentary resistive switching
title_full Origin of resistance state relaxation and nonvolatile features in NiO films: Interfacial vs filamentary resistive switching
title_fullStr Origin of resistance state relaxation and nonvolatile features in NiO films: Interfacial vs filamentary resistive switching
title_full_unstemmed Origin of resistance state relaxation and nonvolatile features in NiO films: Interfacial vs filamentary resistive switching
title_sort origin of resistance state relaxation and nonvolatile features in nio films: interfacial vs filamentary resistive switching
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2020-10-01
description NiO films grown on Pt and Nb:SrTiO3 (NSTO) substrates display filament-type and interface-type resistance switching (RS), respectively. The resistance retention studies show that these two different RSs also lead to distinct resistance evolutions. For Pt/NiO/Pt, both high and low resistance states have good retention property, demonstrating that the conducting filament is stable once it is formed. However, for Pt/NiO/NSTO/In, all resistance states show time-relaxation, and the relaxation trend depends on the polarity of the write bias. The resistive relaxation and nonvolatile features are attributed to the charge migration and electron trapping scenario, respectively.
url http://dx.doi.org/10.1063/5.0007173
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AT yanfengyin originofresistancestaterelaxationandnonvolatilefeaturesinniofilmsinterfacialvsfilamentaryresistiveswitching
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