Origin of resistance state relaxation and nonvolatile features in NiO films: Interfacial vs filamentary resistive switching

Origin of resistance state relaxation and nonvolatile features in NiO films: Interfacial vs filamentary resistive switching

NiO films grown on Pt and Nb:SrTiO3 (NSTO) substrates display filament-type and interface-type resistance switching (RS), respectively. The resistance retention studies show that these two different RSs also lead to distinct resistance evolutions. For Pt/NiO/Pt, both high and low resistance states h...

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Bibliographic Details
Main Authors: Wanying Xia, Xianwen Sun, Yanfeng Yin, Caihong Jia, Guoqiang Li, Weifeng Zhang
Format: Article
Language:English
Published: AIP Publishing LLC 2020-10-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0007173
Description
Summary:NiO films grown on Pt and Nb:SrTiO3 (NSTO) substrates display filament-type and interface-type resistance switching (RS), respectively. The resistance retention studies show that these two different RSs also lead to distinct resistance evolutions. For Pt/NiO/Pt, both high and low resistance states have good retention property, demonstrating that the conducting filament is stable once it is formed. However, for Pt/NiO/NSTO/In, all resistance states show time-relaxation, and the relaxation trend depends on the polarity of the write bias. The resistive relaxation and nonvolatile features are attributed to the charge migration and electron trapping scenario, respectively.
ISSN:2158-3226

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