Magnetic properties of bismuth substituted yttrium iron garnet film with perpendicular magnetic anisotropy

Magnetic properties of bismuth substituted yttrium iron garnet film with perpendicular magnetic anisotropy

In this paper, the Y2Bi1Fe5O12 films were grown on substituted gadolinium gallium garnet substrate by radio frequency magnetron sputtering and their magnetic properties were investigated. We found that the 20 nm-thick film had the best perpendicular magnetic anisotropy (PMA) under the combined effec...

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Main Authors: Xiuting Liu, Qinghui Yang, Ding Zhang, Yujuan Wu, Huaiwu Zhang
Format: Article
Language:English
Published: AIP Publishing LLC 2019-11-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5122998
id doaj-2cfc47b523474b5bbc3bfba9fa2480f6
record_format Article
spelling doaj-2cfc47b523474b5bbc3bfba9fa2480f62020-11-25T02:04:38ZengAIP Publishing LLCAIP Advances2158-32262019-11-01911115001115001-610.1063/1.5122998Magnetic properties of bismuth substituted yttrium iron garnet film with perpendicular magnetic anisotropyXiuting Liu0Qinghui Yang1Ding Zhang2Yujuan Wu3Huaiwu Zhang4State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People’s Republic of ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People’s Republic of ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People’s Republic of ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People’s Republic of ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People’s Republic of ChinaIn this paper, the Y2Bi1Fe5O12 films were grown on substituted gadolinium gallium garnet substrate by radio frequency magnetron sputtering and their magnetic properties were investigated. We found that the 20 nm-thick film had the best perpendicular magnetic anisotropy (PMA) under the combined effect of stress-induced anisotropy and surface roughness of the film; the applied magnetic field required for its out-of-plane magnetization saturation was 90 Oe, the remanence ratio was 0.8, the coercive force was 30 Oe, and the damping constant was 3.37 × 10−3. The PMA of the films was reduced due to the relaxation of the stress as the thickness of the film increased, and the easy magnetization axis became in-plane as the thickness reached 40 nm.http://dx.doi.org/10.1063/1.5122998
collection DOAJ
language English
format Article
sources DOAJ
author Xiuting Liu
Qinghui Yang
Ding Zhang
Yujuan Wu
Huaiwu Zhang
spellingShingle Xiuting Liu
Qinghui Yang
Ding Zhang
Yujuan Wu
Huaiwu Zhang
Magnetic properties of bismuth substituted yttrium iron garnet film with perpendicular magnetic anisotropy
AIP Advances
author_facet Xiuting Liu
Qinghui Yang
Ding Zhang
Yujuan Wu
Huaiwu Zhang
author_sort Xiuting Liu
title Magnetic properties of bismuth substituted yttrium iron garnet film with perpendicular magnetic anisotropy
title_short Magnetic properties of bismuth substituted yttrium iron garnet film with perpendicular magnetic anisotropy
title_full Magnetic properties of bismuth substituted yttrium iron garnet film with perpendicular magnetic anisotropy
title_fullStr Magnetic properties of bismuth substituted yttrium iron garnet film with perpendicular magnetic anisotropy
title_full_unstemmed Magnetic properties of bismuth substituted yttrium iron garnet film with perpendicular magnetic anisotropy
title_sort magnetic properties of bismuth substituted yttrium iron garnet film with perpendicular magnetic anisotropy
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2019-11-01
description In this paper, the Y2Bi1Fe5O12 films were grown on substituted gadolinium gallium garnet substrate by radio frequency magnetron sputtering and their magnetic properties were investigated. We found that the 20 nm-thick film had the best perpendicular magnetic anisotropy (PMA) under the combined effect of stress-induced anisotropy and surface roughness of the film; the applied magnetic field required for its out-of-plane magnetization saturation was 90 Oe, the remanence ratio was 0.8, the coercive force was 30 Oe, and the damping constant was 3.37 × 10−3. The PMA of the films was reduced due to the relaxation of the stress as the thickness of the film increased, and the easy magnetization axis became in-plane as the thickness reached 40 nm.
url http://dx.doi.org/10.1063/1.5122998
work_keys_str_mv AT xiutingliu magneticpropertiesofbismuthsubstitutedyttriumirongarnetfilmwithperpendicularmagneticanisotropy
AT qinghuiyang magneticpropertiesofbismuthsubstitutedyttriumirongarnetfilmwithperpendicularmagneticanisotropy
AT dingzhang magneticpropertiesofbismuthsubstitutedyttriumirongarnetfilmwithperpendicularmagneticanisotropy
AT yujuanwu magneticpropertiesofbismuthsubstitutedyttriumirongarnetfilmwithperpendicularmagneticanisotropy
AT huaiwuzhang magneticpropertiesofbismuthsubstitutedyttriumirongarnetfilmwithperpendicularmagneticanisotropy
_version_ 1724942000893984768

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