Formation of a Thin Continuous GaSb Film on Si(001) by Solid Phase Epitaxy

Nanocrystalline GaSb films were grown on Si(001) from the stoichiometric Ga⁻Sb mixture using solid-phase epitaxy at temperatures of 200⁻500 °C. Use of the solid-phase epitaxy method allowed the suppression of Ga surface diffusion and prevention of intense Sb desorption....

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Main Authors:	Evgeniy Chusovitin, Sergey Dotsenko, Svetlana Chusovitina, Dmitry Goroshko, Anton Gutakovskii, Evgeniy Subbotin, Konstantin Galkin, Nikolay Galkin
Format:	Article
Language:	English
Published:	MDPI AG 2018-11-01
Series:	Nanomaterials
Subjects:	solid phase epitaxy crystal structure epitaxial relationships GaSb Si(001)
Online Access:	https://www.mdpi.com/2079-4991/8/12/987

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record_format	Article
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Evgeniy Chusovitin Sergey Dotsenko Svetlana Chusovitina Dmitry Goroshko Anton Gutakovskii Evgeniy Subbotin Konstantin Galkin Nikolay Galkin
spellingShingle	Evgeniy Chusovitin Sergey Dotsenko Svetlana Chusovitina Dmitry Goroshko Anton Gutakovskii Evgeniy Subbotin Konstantin Galkin Nikolay Galkin Formation of a Thin Continuous GaSb Film on Si(001) by Solid Phase Epitaxy Nanomaterials solid phase epitaxy crystal structure epitaxial relationships GaSb Si(001)
author_facet	Evgeniy Chusovitin Sergey Dotsenko Svetlana Chusovitina Dmitry Goroshko Anton Gutakovskii Evgeniy Subbotin Konstantin Galkin Nikolay Galkin
author_sort	Evgeniy Chusovitin
title	Formation of a Thin Continuous GaSb Film on Si(001) by Solid Phase Epitaxy
title_short	Formation of a Thin Continuous GaSb Film on Si(001) by Solid Phase Epitaxy
title_full	Formation of a Thin Continuous GaSb Film on Si(001) by Solid Phase Epitaxy
title_fullStr	Formation of a Thin Continuous GaSb Film on Si(001) by Solid Phase Epitaxy
title_full_unstemmed	Formation of a Thin Continuous GaSb Film on Si(001) by Solid Phase Epitaxy
title_sort	formation of a thin continuous gasb film on si(001) by solid phase epitaxy
publisher	MDPI AG
series	Nanomaterials
issn	2079-4991
publishDate	2018-11-01
description	Nanocrystalline GaSb films were grown on Si(001) from the stoichiometric Ga⁻Sb mixture using solid-phase epitaxy at temperatures of 200⁻500 °C. Use of the solid-phase epitaxy method allowed the suppression of Ga surface diffusion and prevention of intense Sb desorption. At the annealing temperature of 300 °C, a 14-nm-thick GaSb film aggregates, while a 20-nm-thick GaSb film remains continuous with a roughness of 1.74 nm. A GaSb film with a thickness of 20 nm consists of crystalline grains with a size of 9⁻16 nm. They were compressed by ~2%. For some GaSb grains, new epitaxial relationships have been found: GaSb<inline-formula> <math display="inline"> <semantics> <mrow> <mrow> <mo>(</mo> <mrow> <mn>111</mn> </mrow> <mo>)</mo> </mrow> </mrow> </semantics> </math> </inline-formula>\|\|Si<inline-formula> <math display="inline"> <semantics> <mrow> <mrow> <mo>(</mo> <mrow> <mn>11</mn> <mover accent="true"> <mn>1</mn> <mo>¯</mo> </mover> </mrow> <mo>)</mo> </mrow> </mrow> </semantics> </math> </inline-formula> and GaSb<inline-formula> <math display="inline"> <semantics> <mrow> <mrow> <mo>[</mo> <mrow> <mn>11</mn> <mover accent="true"> <mn>2</mn> <mo>¯</mo> </mover> </mrow> <mo>]</mo> </mrow> </mrow> </semantics> </math> </inline-formula>\|\|Si<inline-formula> <math display="inline"> <semantics> <mrow> <mrow> <mo>[</mo> <mrow> <mn>1</mn> <mover accent="true"> <mn>1</mn> <mo>¯</mo> </mover> <mn>0</mn> </mrow> <mo>]</mo> </mrow> </mrow> </semantics> </math> </inline-formula>, GaSb<inline-formula> <math display="inline"> <semantics> <mrow> <mrow> <mo>(</mo> <mrow> <mn>113</mn> </mrow> <mo>)</mo> </mrow> </mrow> </semantics> </math> </inline-formula>\|\|Si<inline-formula> <math display="inline"> <semantics> <mrow> <mrow> <mo>(</mo> <mrow> <mn>11</mn> <mover accent="true"> <mn>1</mn> <mo>¯</mo> </mover> </mrow> <mo>)</mo> </mrow> </mrow> </semantics> </math> </inline-formula> and GaSb<inline-formula> <math display="inline"> <semantics> <mrow> <mrow> <mo>[</mo> <mrow> <mn>1</mn> <mover accent="true"> <mn>1</mn> <mo>¯</mo> </mover> <mn>0</mn> </mrow> <mo>]</mo> </mrow> </mrow> </semantics> </math> </inline-formula>\|\|Si<inline-formula> <math display="inline"> <semantics> <mrow> <mrow> <mo>[</mo> <mrow> <mn>1</mn> <mover accent="true"> <mn>1</mn> <mo>¯</mo> </mover> <mn>0</mn> </mrow> <mo>]</mo> </mrow> </mrow> </semantics> </math> </inline-formula>, and GaSb<inline-formula> <math display="inline"> <semantics> <mrow> <mrow> <mo>(</mo> <mrow> <mn>11</mn> <mover accent="true"> <mn>1</mn> <mo>¯</mo> </mover> </mrow> <mo>)</mo> </mrow> </mrow> </semantics> </math> </inline-formula>\|\|Si<inline-formula> <math display="inline"> <semantics> <mrow> <mrow> <mo>(</mo> <mrow> <mn>002</mn> </mrow> <mo>)</mo> </mrow> </mrow> </semantics> </math> </inline-formula> and GaSb<inline-formula> <math display="inline"> <semantics> <mrow> <mrow> <mo>[</mo> <mrow> <mn>1</mn> <mover accent="true"> <mn>1</mn> <mo>¯</mo> </mover> <mn>0</mn> </mrow> <mo>]</mo> </mrow> </mrow> </semantics> </math> </inline-formula>\|\|Si<inline-formula> <math display="inline"> <semantics> <mrow> <mrow> <mo>[</mo> <mrow> <mn>1</mn> <mover accent="true"> <mn>1</mn> <mo>¯</mo> </mover> <mn>0</mn> </mrow> <mo>]</mo> </mrow> </mrow> </semantics> </math> </inline-formula>.
topic	solid phase epitaxy crystal structure epitaxial relationships GaSb Si(001)
url	https://www.mdpi.com/2079-4991/8/12/987
work_keys_str_mv	AT evgeniychusovitin formationofathincontinuousgasbfilmonsi001bysolidphaseepitaxy AT sergeydotsenko formationofathincontinuousgasbfilmonsi001bysolidphaseepitaxy AT svetlanachusovitina formationofathincontinuousgasbfilmonsi001bysolidphaseepitaxy AT dmitrygoroshko formationofathincontinuousgasbfilmonsi001bysolidphaseepitaxy AT antongutakovskii formationofathincontinuousgasbfilmonsi001bysolidphaseepitaxy AT evgeniysubbotin formationofathincontinuousgasbfilmonsi001bysolidphaseepitaxy AT konstantingalkin formationofathincontinuousgasbfilmonsi001bysolidphaseepitaxy AT nikolaygalkin formationofathincontinuousgasbfilmonsi001bysolidphaseepitaxy
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spelling	doaj-2cef1e882fe148aca4a4d86a4dc6e8d32020-11-25T00:37:13ZengMDPI AGNanomaterials2079-49912018-11-0181298710.3390/nano8120987nano8120987Formation of a Thin Continuous GaSb Film on Si(001) by Solid Phase EpitaxyEvgeniy Chusovitin0Sergey Dotsenko1Svetlana Chusovitina2Dmitry Goroshko3Anton Gutakovskii4Evgeniy Subbotin5Konstantin Galkin6Nikolay Galkin7Institute of Automation and Control Processes FEB RAS, 5 Radio St., 690041 Vladivostok, RussiaInstitute of Automation and Control Processes FEB RAS, 5 Radio St., 690041 Vladivostok, RussiaInstitute of Automation and Control Processes FEB RAS, 5 Radio St., 690041 Vladivostok, RussiaInstitute of Automation and Control Processes FEB RAS, 5 Radio St., 690041 Vladivostok, RussiaRzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentieva Ave., 630090 Novosibirsk, RussiaInstitute of Automation and Control Processes FEB RAS, 5 Radio St., 690041 Vladivostok, RussiaInstitute of Automation and Control Processes FEB RAS, 5 Radio St., 690041 Vladivostok, RussiaInstitute of Automation and Control Processes FEB RAS, 5 Radio St., 690041 Vladivostok, RussiaNanocrystalline GaSb films were grown on Si(001) from the stoichiometric Ga⁻Sb mixture using solid-phase epitaxy at temperatures of 200⁻500 °C. Use of the solid-phase epitaxy method allowed the suppression of Ga surface diffusion and prevention of intense Sb desorption. At the annealing temperature of 300 °C, a 14-nm-thick GaSb film aggregates, while a 20-nm-thick GaSb film remains continuous with a roughness of 1.74 nm. A GaSb film with a thickness of 20 nm consists of crystalline grains with a size of 9⁻16 nm. They were compressed by ~2%. For some GaSb grains, new epitaxial relationships have been found: GaSb<inline-formula> <math display="inline"> <semantics> <mrow> <mrow> <mo>(</mo> <mrow> <mn>111</mn> </mrow> <mo>)</mo> </mrow> </mrow> </semantics> </math> </inline-formula>\|\|Si<inline-formula> <math display="inline"> <semantics> <mrow> <mrow> <mo>(</mo> <mrow> <mn>11</mn> <mover accent="true"> <mn>1</mn> <mo>¯</mo> </mover> </mrow> <mo>)</mo> </mrow> </mrow> </semantics> </math> </inline-formula> and GaSb<inline-formula> <math display="inline"> <semantics> <mrow> <mrow> <mo>[</mo> <mrow> <mn>11</mn> <mover accent="true"> <mn>2</mn> <mo>¯</mo> </mover> </mrow> <mo>]</mo> </mrow> </mrow> </semantics> </math> </inline-formula>\|\|Si<inline-formula> <math display="inline"> <semantics> <mrow> <mrow> <mo>[</mo> <mrow> <mn>1</mn> <mover accent="true"> <mn>1</mn> <mo>¯</mo> </mover> <mn>0</mn> </mrow> <mo>]</mo> </mrow> </mrow> </semantics> </math> </inline-formula>, GaSb<inline-formula> <math display="inline"> <semantics> <mrow> <mrow> <mo>(</mo> <mrow> <mn>113</mn> </mrow> <mo>)</mo> </mrow> </mrow> </semantics> </math> </inline-formula>\|\|Si<inline-formula> <math display="inline"> <semantics> <mrow> <mrow> <mo>(</mo> <mrow> <mn>11</mn> <mover accent="true"> <mn>1</mn> <mo>¯</mo> </mover> </mrow> <mo>)</mo> </mrow> </mrow> </semantics> </math> </inline-formula> and GaSb<inline-formula> <math display="inline"> <semantics> <mrow> <mrow> <mo>[</mo> <mrow> <mn>1</mn> <mover accent="true"> <mn>1</mn> <mo>¯</mo> </mover> <mn>0</mn> </mrow> <mo>]</mo> </mrow> </mrow> </semantics> </math> </inline-formula>\|\|Si<inline-formula> <math display="inline"> <semantics> <mrow> <mrow> <mo>[</mo> <mrow> <mn>1</mn> <mover accent="true"> <mn>1</mn> <mo>¯</mo> </mover> <mn>0</mn> </mrow> <mo>]</mo> </mrow> </mrow> </semantics> </math> </inline-formula>, and GaSb<inline-formula> <math display="inline"> <semantics> <mrow> <mrow> <mo>(</mo> <mrow> <mn>11</mn> <mover accent="true"> <mn>1</mn> <mo>¯</mo> </mover> </mrow> <mo>)</mo> </mrow> </mrow> </semantics> </math> </inline-formula>\|\|Si<inline-formula> <math display="inline"> <semantics> <mrow> <mrow> <mo>(</mo> <mrow> <mn>002</mn> </mrow> <mo>)</mo> </mrow> </mrow> </semantics> </math> </inline-formula> and GaSb<inline-formula> <math display="inline"> <semantics> <mrow> <mrow> <mo>[</mo> <mrow> <mn>1</mn> <mover accent="true"> <mn>1</mn> <mo>¯</mo> </mover> <mn>0</mn> </mrow> <mo>]</mo> </mrow> </mrow> </semantics> </math> </inline-formula>\|\|Si<inline-formula> <math display="inline"> <semantics> <mrow> <mrow> <mo>[</mo> <mrow> <mn>1</mn> <mover accent="true"> <mn>1</mn> <mo>¯</mo> </mover> <mn>0</mn> </mrow> <mo>]</mo> </mrow> </mrow> </semantics> </math> </inline-formula>.https://www.mdpi.com/2079-4991/8/12/987solid phase epitaxycrystal structureepitaxial relationshipsGaSbSi(001)

Formation of a Thin Continuous GaSb Film on Si(001) by Solid Phase Epitaxy

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