ESTIMATING THE INTENSITY OF GERM-GRAIN MODELS WITH OVERLAPPING GRAINS

Formulas are derived for the spherical contact distribution of a planar germ-grain model Z with circular grains where the germs formeither a 'segment cluster' process or a 'line-based' Poisson point process. They are used in order to estimate the intensityl of the germprocess by...

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Main Authors:	Hamid Ghorbani, Dietrich Stoyan
Format:	Article
Language:	English
Published:	Slovenian Society for Stereology and Quantitative Image Analysis 2011-05-01
Series:	Image Analysis and Stereology
Subjects:	dislocations germ-grain model intensity Poison cluster process Poison line process silicon wafer spherical contact distribution function
Online Access:	http://www.ias-iss.org/ojs/IAS/article/view/743

id	doaj-2cada2ee37044b86a97c45a4755bc516
record_format	Article
spelling	doaj-2cada2ee37044b86a97c45a4755bc5162020-11-25T00:15:33ZengSlovenian Society for Stereology and Quantitative Image AnalysisImage Analysis and Stereology1580-31391854-51652011-05-0122314715210.5566/ias.v22.p147-152715ESTIMATING THE INTENSITY OF GERM-GRAIN MODELS WITH OVERLAPPING GRAINSHamid GhorbaniDietrich StoyanFormulas are derived for the spherical contact distribution of a planar germ-grain model Z with circular grains where the germs formeither a 'segment cluster' process or a 'line-based' Poisson point process. They are used in order to estimate the intensityl of the germprocess by means of the spherical contact distribution function. As an application the number of dislocations on a silicon wafer is estimated.http://www.ias-iss.org/ojs/IAS/article/view/743dislocationsgerm-grain modelintensityPoison cluster processPoison line processsilicon waferspherical contact distribution function
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Hamid Ghorbani Dietrich Stoyan
spellingShingle	Hamid Ghorbani Dietrich Stoyan ESTIMATING THE INTENSITY OF GERM-GRAIN MODELS WITH OVERLAPPING GRAINS Image Analysis and Stereology dislocations germ-grain model intensity Poison cluster process Poison line process silicon wafer spherical contact distribution function
author_facet	Hamid Ghorbani Dietrich Stoyan
author_sort	Hamid Ghorbani
title	ESTIMATING THE INTENSITY OF GERM-GRAIN MODELS WITH OVERLAPPING GRAINS
title_short	ESTIMATING THE INTENSITY OF GERM-GRAIN MODELS WITH OVERLAPPING GRAINS
title_full	ESTIMATING THE INTENSITY OF GERM-GRAIN MODELS WITH OVERLAPPING GRAINS
title_fullStr	ESTIMATING THE INTENSITY OF GERM-GRAIN MODELS WITH OVERLAPPING GRAINS
title_full_unstemmed	ESTIMATING THE INTENSITY OF GERM-GRAIN MODELS WITH OVERLAPPING GRAINS
title_sort	estimating the intensity of germ-grain models with overlapping grains
publisher	Slovenian Society for Stereology and Quantitative Image Analysis
series	Image Analysis and Stereology
issn	1580-3139 1854-5165
publishDate	2011-05-01
description	Formulas are derived for the spherical contact distribution of a planar germ-grain model Z with circular grains where the germs formeither a 'segment cluster' process or a 'line-based' Poisson point process. They are used in order to estimate the intensityl of the germprocess by means of the spherical contact distribution function. As an application the number of dislocations on a silicon wafer is estimated.
topic	dislocations germ-grain model intensity Poison cluster process Poison line process silicon wafer spherical contact distribution function
url	http://www.ias-iss.org/ojs/IAS/article/view/743
work_keys_str_mv	AT hamidghorbani estimatingtheintensityofgermgrainmodelswithoverlappinggrains AT dietrichstoyan estimatingtheintensityofgermgrainmodelswithoverlappinggrains
_version_	1725386282125754368

ESTIMATING THE INTENSITY OF GERM-GRAIN MODELS WITH OVERLAPPING GRAINS

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