A Dual-Band Low Noise Low Power Local LC Oscillator

In this paper a novel design is presented for a dual-band LC oscillator, using an analytical approach. The core of the proposed circuit contains a cross-coupled CMOS LC oscillator with two serried LC tanks so that the inductors of these tanks have mutual inductance. There are some switches in the ci...

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Main Authors: H. Ghonoodi, M. Hadjmohammadi
Format: Article
Language:English
Published: Iran University of Science and Technology 2021-12-01
Series:Iranian Journal of Electrical and Electronic Engineering
Subjects:
Online Access:http://ijeee.iust.ac.ir/article-1-1992-en.html
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spelling doaj-2c32d05dc4f44420b98c27178d4f1a5d2021-06-06T07:47:24ZengIran University of Science and TechnologyIranian Journal of Electrical and Electronic Engineering1735-28272383-38902021-12-0117419921992A Dual-Band Low Noise Low Power Local LC OscillatorH. Ghonoodi0M. Hadjmohammadi1 Faculty of Technology and Engineering, University of Mazandaran, Mazandaran, Iran. Faculty of Technology and Engineering, University of Mazandaran, Mazandaran, Iran. In this paper a novel design is presented for a dual-band LC oscillator, using an analytical approach. The core of the proposed circuit contains a cross-coupled CMOS LC oscillator with two serried LC tanks so that the inductors of these tanks have mutual inductance. There are some switches in the circuit that directly changes mutual inductance to produce two different frequencies. This technique increases the oscillation amplitude in the same power consumption that leads to the decrement of phase noise. In other words, using two serried LC tank compensates the injected phase noise from switches. The symmetrical structure is another advantage of the presented design that makes it possible to be used in multiphase oscillator. To assess the quality of the proposed circuit, a dual-band quadrature LC oscillator has been designed to oscillate at 3.6 GHz and 6.4 GHz with 1.5 V supply and 1 mA current consumption, with TSMC 0.18 CMOS practical model. Lastly, simulation results confirm the correctness of analytical results and high proficiency of the proposed design.http://ijeee.iust.ac.ir/article-1-1992-en.htmldual band oscillatorphase noiserf cmosanalysis.
collection DOAJ
language English
format Article
sources DOAJ
author H. Ghonoodi
M. Hadjmohammadi
spellingShingle H. Ghonoodi
M. Hadjmohammadi
A Dual-Band Low Noise Low Power Local LC Oscillator
Iranian Journal of Electrical and Electronic Engineering
dual band oscillator
phase noise
rf cmos
analysis.
author_facet H. Ghonoodi
M. Hadjmohammadi
author_sort H. Ghonoodi
title A Dual-Band Low Noise Low Power Local LC Oscillator
title_short A Dual-Band Low Noise Low Power Local LC Oscillator
title_full A Dual-Band Low Noise Low Power Local LC Oscillator
title_fullStr A Dual-Band Low Noise Low Power Local LC Oscillator
title_full_unstemmed A Dual-Band Low Noise Low Power Local LC Oscillator
title_sort dual-band low noise low power local lc oscillator
publisher Iran University of Science and Technology
series Iranian Journal of Electrical and Electronic Engineering
issn 1735-2827
2383-3890
publishDate 2021-12-01
description In this paper a novel design is presented for a dual-band LC oscillator, using an analytical approach. The core of the proposed circuit contains a cross-coupled CMOS LC oscillator with two serried LC tanks so that the inductors of these tanks have mutual inductance. There are some switches in the circuit that directly changes mutual inductance to produce two different frequencies. This technique increases the oscillation amplitude in the same power consumption that leads to the decrement of phase noise. In other words, using two serried LC tank compensates the injected phase noise from switches. The symmetrical structure is another advantage of the presented design that makes it possible to be used in multiphase oscillator. To assess the quality of the proposed circuit, a dual-band quadrature LC oscillator has been designed to oscillate at 3.6 GHz and 6.4 GHz with 1.5 V supply and 1 mA current consumption, with TSMC 0.18 CMOS practical model. Lastly, simulation results confirm the correctness of analytical results and high proficiency of the proposed design.
topic dual band oscillator
phase noise
rf cmos
analysis.
url http://ijeee.iust.ac.ir/article-1-1992-en.html
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