830-nm InGaAs Quantum Well Lasers With Very Low Beam Divergence
We report on our design and fabrication of 830-nm high-power semiconductor lasers with very low beam divergence. Here, we propose a novel approach in which by combining asymmetric waveguide and a feature called “pins” together, we were able to design an optimize epi structure,...
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IEEE
2017-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/8006218/ |
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doaj-2c226020eec146528b13883557331ce02021-03-29T17:39:06ZengIEEEIEEE Photonics Journal1943-06552017-01-01951810.1109/JPHOT.2017.27368808006218830-nm InGaAs Quantum Well Lasers With Very Low Beam DivergenceBocang Qiu0Hai Martin Hu1Weimin Wang2James Ho3Wenbin Liu4Langxing Kuang5Taishan Wang6Shujuan Wu7Research Institute of Tsinghua University in Shenzhen, Shenzhen, ChinaResearch Institute of Tsinghua University in Shenzhen, Shenzhen, ChinaRaybow Optoelectronics Ltd., Inc., Shenzhen, ChinaResearch Institute of Tsinghua University in Shenzhen, Shenzhen, ChinaRaybow Optoelectronics Ltd., Inc., Shenzhen, ChinaRaybow Optoelectronics Ltd., Inc., Shenzhen, ChinaRaybow Optoelectronics Ltd., Inc., Shenzhen, ChinaRaybow Optoelectronics Ltd., Inc., Shenzhen, ChinaWe report on our design and fabrication of 830-nm high-power semiconductor lasers with very low beam divergence. Here, we propose a novel approach in which by combining asymmetric waveguide and a feature called “pins” together, we were able to design an optimize epi structure, which not only produces a beam divergence of less than 16°, which is measured at the full width at the half maximum, but also has very good growth tolerance as well. Device test shows the beam divergence is as small as 13°, yet they still retain high slope efficiency of around 1.15 W/A and low threshold current of 400 mA for the devices with cavity length being 2 mm long, and ridge width being 40 μm wide.https://ieeexplore.ieee.org/document/8006218/Low beam divergencelow far field830 nm semiconductor lasersInGaAs semiconductor lasers. |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Bocang Qiu Hai Martin Hu Weimin Wang James Ho Wenbin Liu Langxing Kuang Taishan Wang Shujuan Wu |
| spellingShingle |
Bocang Qiu Hai Martin Hu Weimin Wang James Ho Wenbin Liu Langxing Kuang Taishan Wang Shujuan Wu 830-nm InGaAs Quantum Well Lasers With Very Low Beam Divergence IEEE Photonics Journal Low beam divergence low far field 830 nm semiconductor lasers InGaAs semiconductor lasers. |
| author_facet |
Bocang Qiu Hai Martin Hu Weimin Wang James Ho Wenbin Liu Langxing Kuang Taishan Wang Shujuan Wu |
| author_sort |
Bocang Qiu |
| title |
830-nm InGaAs Quantum Well Lasers With Very Low Beam Divergence |
| title_short |
830-nm InGaAs Quantum Well Lasers With Very Low Beam Divergence |
| title_full |
830-nm InGaAs Quantum Well Lasers With Very Low Beam Divergence |
| title_fullStr |
830-nm InGaAs Quantum Well Lasers With Very Low Beam Divergence |
| title_full_unstemmed |
830-nm InGaAs Quantum Well Lasers With Very Low Beam Divergence |
| title_sort |
830-nm ingaas quantum well lasers with very low beam divergence |
| publisher |
IEEE |
| series |
IEEE Photonics Journal |
| issn |
1943-0655 |
| publishDate |
2017-01-01 |
| description |
We report on our design and fabrication of 830-nm high-power semiconductor lasers with very low beam divergence. Here, we propose a novel approach in which by combining asymmetric waveguide and a feature called “pins” together, we were able to design an optimize epi structure, which not only produces a beam divergence of less than 16°, which is measured at the full width at the half maximum, but also has very good growth tolerance as well. Device test shows the beam divergence is as small as 13°, yet they still retain high slope efficiency of around 1.15 W/A and low threshold current of 400 mA for the devices with cavity length being 2 mm long, and ridge width being 40 μm wide. |
| topic |
Low beam divergence low far field 830 nm semiconductor lasers InGaAs semiconductor lasers. |
| url |
https://ieeexplore.ieee.org/document/8006218/ |
| work_keys_str_mv |
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| _version_ |
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