Thermal Characteristics of InGaN/GaN Flip-Chip Light Emitting Diodes with Diamond-Like Carbon Heat-Spreading Layers
The temperature-dependent optical, electrical, and thermal properties of flip-chip light emitting diodes (FCLEDs) with diamond-like carbon (DLC) heat-spreading layers were investigated. On the basis of the measured results in the 20°C to 100°C temperature range, a significant performance improvement...
Main Authors: | Pai-Yang Tsai, Hou-Kuei Huang, Chien-Min Sung, Ming-Chi Kan, Yeong-Her Wang |
---|---|
Format: | Article |
Language: | English |
Published: |
Hindawi Limited
2014-01-01
|
Series: | International Journal of Photoenergy |
Online Access: | http://dx.doi.org/10.1155/2014/829284 |
Similar Items
-
Investigation of InGaN/GaN Light Emitting Diode
by: Chia-Ming Lee, et al.
Published: (2004) -
Investigation of InGaN/GaN Light Emitting Diode
by: Yu-Chuan Liu, et al.
Published: (2004) -
An Improved InGaN/GaN Light Emitting Diode
by: Wu,Jou-Hsuan, et al.
Published: (2013) -
Characterisation of InGaN/GaN light emitting diodes
by: Sharma, Nikhil
Published: (2001) -
Investigation of InGaN/GaN multiple-quantum-well blue light emitting diode with InGaN/GaN superlattice current spreading layer
by: An-Bang Wang, et al.
Published: (2005)