High-Drain Field Impacting Channel-Length Modulation Effect for Nano-Node N-Channel FinFETs
Three dimensional (3-D) FinFET devices with an ultra-high Si-fin aspect ratio have been developed after integrating a 14Å nitrided gate oxide upon the silicon on insulator (SOI) wafers through an advanced CMOS logic platform. Under the lower gate voltage (<i>V<sub>GS</sub></i>...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-03-01
|
| Series: | Crystals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-4352/11/3/262 |
| id |
doaj-2bd4f281cefd4065a59b67135d146ffa |
|---|---|
| record_format |
Article |
| spelling |
doaj-2bd4f281cefd4065a59b67135d146ffa2021-03-08T00:01:49ZengMDPI AGCrystals2073-43522021-03-011126226210.3390/cryst11030262High-Drain Field Impacting Channel-Length Modulation Effect for Nano-Node N-Channel FinFETsMu-Chun Wang0Wen-Ching Hsieh1Chii-Ruey Lin2Wei-Lun Chu3Wen-Shiang Liao4Wen-How Lan5Department of Electronic Engineering, Minghsin University of Science and Technology, Hsinchu 30401, TaiwanDepartment of Electro-Optical Engineering, Minghsin University of Science and Technology, Hsinchu 30401, TaiwanDepartment of Mechanical Engineering, National Taipei University of Technology, Taipei 10608, TaiwanDepartment of Electronic Engineering, Minghsin University of Science and Technology, Hsinchu 30401, TaiwanDepartment of Electronic Engineering, Minghsin University of Science and Technology, Hsinchu 30401, TaiwanDepartment of Electrical Engineering, National University of Kaohsiung, Kaohsiung 81148, TaiwanThree dimensional (3-D) FinFET devices with an ultra-high Si-fin aspect ratio have been developed after integrating a 14Å nitrided gate oxide upon the silicon on insulator (SOI) wafers through an advanced CMOS logic platform. Under the lower gate voltage (<i>V<sub>GS</sub></i>-<i>V<sub>T</sub></i>) and the higher drain/source voltage <i>V<sub>DS</sub></i>, the channel-length modulation (CLM) effect coming from the interaction impact of vertical gate field and horizontal drain field was increased and had to be revised well as the channel length <i>L</i> was decreased. Compared to the 28-nm MOSFETs, the interaction effect from the previous at the tested FinFETs on SOI substrate with the short-channel length <i>L</i> is lower than that at the 28-nm device, which means the interaction severity of both fields for nFinFETs is mitigated, but still necessary to be concerned.https://www.mdpi.com/2073-4352/11/3/262FinFETSOIearly effectCMOSMOSFETdrive current. |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Mu-Chun Wang Wen-Ching Hsieh Chii-Ruey Lin Wei-Lun Chu Wen-Shiang Liao Wen-How Lan |
| spellingShingle |
Mu-Chun Wang Wen-Ching Hsieh Chii-Ruey Lin Wei-Lun Chu Wen-Shiang Liao Wen-How Lan High-Drain Field Impacting Channel-Length Modulation Effect for Nano-Node N-Channel FinFETs Crystals FinFET SOI early effect CMOS MOSFET drive current. |
| author_facet |
Mu-Chun Wang Wen-Ching Hsieh Chii-Ruey Lin Wei-Lun Chu Wen-Shiang Liao Wen-How Lan |
| author_sort |
Mu-Chun Wang |
| title |
High-Drain Field Impacting Channel-Length Modulation Effect for Nano-Node N-Channel FinFETs |
| title_short |
High-Drain Field Impacting Channel-Length Modulation Effect for Nano-Node N-Channel FinFETs |
| title_full |
High-Drain Field Impacting Channel-Length Modulation Effect for Nano-Node N-Channel FinFETs |
| title_fullStr |
High-Drain Field Impacting Channel-Length Modulation Effect for Nano-Node N-Channel FinFETs |
| title_full_unstemmed |
High-Drain Field Impacting Channel-Length Modulation Effect for Nano-Node N-Channel FinFETs |
| title_sort |
high-drain field impacting channel-length modulation effect for nano-node n-channel finfets |
| publisher |
MDPI AG |
| series |
Crystals |
| issn |
2073-4352 |
| publishDate |
2021-03-01 |
| description |
Three dimensional (3-D) FinFET devices with an ultra-high Si-fin aspect ratio have been developed after integrating a 14Å nitrided gate oxide upon the silicon on insulator (SOI) wafers through an advanced CMOS logic platform. Under the lower gate voltage (<i>V<sub>GS</sub></i>-<i>V<sub>T</sub></i>) and the higher drain/source voltage <i>V<sub>DS</sub></i>, the channel-length modulation (CLM) effect coming from the interaction impact of vertical gate field and horizontal drain field was increased and had to be revised well as the channel length <i>L</i> was decreased. Compared to the 28-nm MOSFETs, the interaction effect from the previous at the tested FinFETs on SOI substrate with the short-channel length <i>L</i> is lower than that at the 28-nm device, which means the interaction severity of both fields for nFinFETs is mitigated, but still necessary to be concerned. |
| topic |
FinFET SOI early effect CMOS MOSFET drive current. |
| url |
https://www.mdpi.com/2073-4352/11/3/262 |
| work_keys_str_mv |
AT muchunwang highdrainfieldimpactingchannellengthmodulationeffectfornanonodenchannelfinfets AT wenchinghsieh highdrainfieldimpactingchannellengthmodulationeffectfornanonodenchannelfinfets AT chiirueylin highdrainfieldimpactingchannellengthmodulationeffectfornanonodenchannelfinfets AT weilunchu highdrainfieldimpactingchannellengthmodulationeffectfornanonodenchannelfinfets AT wenshiangliao highdrainfieldimpactingchannellengthmodulationeffectfornanonodenchannelfinfets AT wenhowlan highdrainfieldimpactingchannellengthmodulationeffectfornanonodenchannelfinfets |
| _version_ |
1724229169386094592 |