Enhanced efficiency in 808 nm GaAs laser power converters via gradient doping
Two batches of GaAs laser power converters (LPCs) with or without a localized gradient doping layer were fabricated via metalorganic chemical vapor deposition for converting the power of 808 nm lasers. The gradient doping layer was introduced into the base layer above the back surface field layer wi...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-10-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5109133 |