Development and Prospect of Process Models and Simulation Methods for Atomic Layer Deposition
Thin film deposition is one of the most important processes in IC manufacturing. In this paper, several typical models and numerical simulation methods for thin film deposition and atomic layer deposition are introduced. Several modeling methods based on the characteristics of atomic layer depositio...
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2019-06-01
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| Series: | Journal of Microelectronic Manufacturing |
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| Online Access: | http://www.jommpublish.org/p/30/# |
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doaj-2b07fe6db25b40dc82574fe9af4712ac2020-11-25T03:08:40ZengJommPublishJournal of Microelectronic Manufacturing2578-37692578-37692019-06-012210.33079/jomm.19020204Development and Prospect of Process Models and Simulation Methods for Atomic Layer Deposition Lei Qu0Rui Chen1Xiaoting Li2Jing Zhang3Yanrong Wang4Shuhua Wei5Jiang Yan6Yayi Wei 7North China University of Technology, China, Beijing 100144 Key Laboratory of Microelectronic Devices, &, Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, China, Beijing 100029Key Laboratory of Microelectronic Devices, &, Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, China, Beijing 100029North China University of Technology, China, Beijing 100144 Key Laboratory of Microelectronic Devices, &, Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, China, Beijing 100029North China University of Technology, China, Beijing 100144North China University of Technology, China, Beijing 100144North China University of Technology, China, Beijing 100144North China University of Technology, China, Beijing 100144Key Laboratory of Microelectronic Devices, &, Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, China, Beijing 100029Thin film deposition is one of the most important processes in IC manufacturing. In this paper, several typical models and numerical simulation methods for thin film deposition and atomic layer deposition are introduced. Several modeling methods based on the characteristics of atomic layer deposition are introduced, it includes geometric method, cellular automata and multi-scale simulation. The principle of each model and simulation method is explained, and their advantages and disadvantages are analyzed. Finally, the development direction of thin film deposition and atomic layer deposition modeling is prospected, and some modeling ideas are also provided.http://www.jommpublish.org/p/30/#thin film depositionatomic layer depositiongrowth modelprediction modelsimulation method |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Lei Qu Rui Chen Xiaoting Li Jing Zhang Yanrong Wang Shuhua Wei Jiang Yan Yayi Wei |
| spellingShingle |
Lei Qu Rui Chen Xiaoting Li Jing Zhang Yanrong Wang Shuhua Wei Jiang Yan Yayi Wei Development and Prospect of Process Models and Simulation Methods for Atomic Layer Deposition Journal of Microelectronic Manufacturing thin film deposition atomic layer deposition growth model prediction model simulation method |
| author_facet |
Lei Qu Rui Chen Xiaoting Li Jing Zhang Yanrong Wang Shuhua Wei Jiang Yan Yayi Wei |
| author_sort |
Lei Qu |
| title |
Development and Prospect of Process Models and Simulation Methods for Atomic Layer Deposition |
| title_short |
Development and Prospect of Process Models and Simulation Methods for Atomic Layer Deposition |
| title_full |
Development and Prospect of Process Models and Simulation Methods for Atomic Layer Deposition |
| title_fullStr |
Development and Prospect of Process Models and Simulation Methods for Atomic Layer Deposition |
| title_full_unstemmed |
Development and Prospect of Process Models and Simulation Methods for Atomic Layer Deposition |
| title_sort |
development and prospect of process models and simulation methods for atomic layer deposition |
| publisher |
JommPublish |
| series |
Journal of Microelectronic Manufacturing |
| issn |
2578-3769 2578-3769 |
| publishDate |
2019-06-01 |
| description |
Thin film deposition is one of the most important processes in IC manufacturing. In this paper, several typical models and numerical simulation methods for thin film deposition and atomic layer deposition are introduced. Several modeling methods based on the characteristics of atomic layer deposition are introduced, it includes geometric method, cellular automata and multi-scale simulation. The principle of each model and simulation method is explained, and their advantages and disadvantages are analyzed. Finally, the development direction of thin film deposition and atomic layer deposition modeling is prospected, and some modeling ideas are also provided. |
| topic |
thin film deposition atomic layer deposition growth model prediction model simulation method |
| url |
http://www.jommpublish.org/p/30/# |
| work_keys_str_mv |
AT leiqu developmentandprospectofprocessmodelsandsimulationmethodsforatomiclayerdeposition AT ruichen developmentandprospectofprocessmodelsandsimulationmethodsforatomiclayerdeposition AT xiaotingli developmentandprospectofprocessmodelsandsimulationmethodsforatomiclayerdeposition AT jingzhang developmentandprospectofprocessmodelsandsimulationmethodsforatomiclayerdeposition AT yanrongwang developmentandprospectofprocessmodelsandsimulationmethodsforatomiclayerdeposition AT shuhuawei developmentandprospectofprocessmodelsandsimulationmethodsforatomiclayerdeposition AT jiangyan developmentandprospectofprocessmodelsandsimulationmethodsforatomiclayerdeposition AT yayiwei developmentandprospectofprocessmodelsandsimulationmethodsforatomiclayerdeposition |
| _version_ |
1724664879753723904 |