Precise Extraction of Dynamic <italic>R</italic><sub>dson</sub> Under High Frequency and High Voltage by a Double-Diode-Isolation Method
A double-diode-isolation method with low parasitic capacitance devices and reverse clamping is proposed to accurately extract the high-frequency and high-voltage dynamic on-resistance (R<sub>dson</sub>) of AlGaN/GaN high electron mobility transistor (HEMT) power devices. The response tim...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2019-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8758228/ |