Characterization of SiO2/SiC interface states and channel mobility from MOSFET characteristics including variable-range hopping at cryogenic temperature

Characterization of SiO2/SiC interface states and channel mobility from MOSFET characteristics including variable-range hopping at cryogenic temperature

The characteristics of SiC MOSFETs (drain current vs. gate voltage) were measured at 0.14−350 K and analyzed considering variable-range hopping conduction through interface states. The total interface state density was determined to be 5.4×1012 cm−2 from the additional shift in the threshold gate vo...

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Main Authors: Hironori Yoshioka, Kazuto Hirata
Format: Article
Language:English
Published: AIP Publishing LLC 2018-04-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5027695
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spelling doaj-29c8a3797f4c4f4f884d50fc90f8874a2020-11-25T01:12:21ZengAIP Publishing LLCAIP Advances2158-32262018-04-0184045217045217-1010.1063/1.5027695064804ADVCharacterization of SiO2/SiC interface states and channel mobility from MOSFET characteristics including variable-range hopping at cryogenic temperatureHironori Yoshioka0Kazuto Hirata1Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8568, JapanResearch Center for Functional Materials, National Institute for Materials Science (NIMS), Tsukuba 305-0047, JapanThe characteristics of SiC MOSFETs (drain current vs. gate voltage) were measured at 0.14−350 K and analyzed considering variable-range hopping conduction through interface states. The total interface state density was determined to be 5.4×1012 cm−2 from the additional shift in the threshold gate voltage with a temperature change. The wave-function size of interface states was determined from the temperature dependence of the measured hopping current and was comparable to the theoretical value. The channel mobility was approximately 100 cm2V−1s−1 and was almost independent of temperature.http://dx.doi.org/10.1063/1.5027695
collection DOAJ
language English
format Article
sources DOAJ
author Hironori Yoshioka
Kazuto Hirata
spellingShingle Hironori Yoshioka
Kazuto Hirata
Characterization of SiO2/SiC interface states and channel mobility from MOSFET characteristics including variable-range hopping at cryogenic temperature
AIP Advances
author_facet Hironori Yoshioka
Kazuto Hirata
author_sort Hironori Yoshioka
title Characterization of SiO2/SiC interface states and channel mobility from MOSFET characteristics including variable-range hopping at cryogenic temperature
title_short Characterization of SiO2/SiC interface states and channel mobility from MOSFET characteristics including variable-range hopping at cryogenic temperature
title_full Characterization of SiO2/SiC interface states and channel mobility from MOSFET characteristics including variable-range hopping at cryogenic temperature
title_fullStr Characterization of SiO2/SiC interface states and channel mobility from MOSFET characteristics including variable-range hopping at cryogenic temperature
title_full_unstemmed Characterization of SiO2/SiC interface states and channel mobility from MOSFET characteristics including variable-range hopping at cryogenic temperature
title_sort characterization of sio2/sic interface states and channel mobility from mosfet characteristics including variable-range hopping at cryogenic temperature
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2018-04-01
description The characteristics of SiC MOSFETs (drain current vs. gate voltage) were measured at 0.14−350 K and analyzed considering variable-range hopping conduction through interface states. The total interface state density was determined to be 5.4×1012 cm−2 from the additional shift in the threshold gate voltage with a temperature change. The wave-function size of interface states was determined from the temperature dependence of the measured hopping current and was comparable to the theoretical value. The channel mobility was approximately 100 cm2V−1s−1 and was almost independent of temperature.
url http://dx.doi.org/10.1063/1.5027695
work_keys_str_mv AT hironoriyoshioka characterizationofsio2sicinterfacestatesandchannelmobilityfrommosfetcharacteristicsincludingvariablerangehoppingatcryogenictemperature
AT kazutohirata characterizationofsio2sicinterfacestatesandchannelmobilityfrommosfetcharacteristicsincludingvariablerangehoppingatcryogenictemperature
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