Dual Functions of V/SiO x /AlO y /p++Si Device as Selector and Memory

Dual Functions of V/SiO x /AlO y /p++Si Device as Selector and Memory

Abstract This letter presents dual functions including selector and memory switching in a V/SiO x /AlO y /p++Si resistive memory device by simply controlling compliance current limit (CCL). Unidirectional threshold switching is observed after a positive forming with low CCL of 1 μA. The shifts to th...

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Bibliographic Details
Main Authors: Sungjun Kim, Chih-Yang Lin, Min-Hwi Kim, Tae-Hyeon Kim, Hyungjin Kim, Ying-Chen Chen, Yao-Feng Chang, Byung-Gook Park
Format: Article
Language:English
Published: SpringerOpen 2018-08-01
Series:Nanoscale Research Letters
Subjects:
Resistive switching
Selector
Memory
Nonlinearity
Silicon oxide
Vanadium
Online Access:http://link.springer.com/article/10.1186/s11671-018-2660-9

Internet

http://link.springer.com/article/10.1186/s11671-018-2660-9

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