Reduced Subthreshold Characteristics and Flicker Noise of an AlGaAs/InGaAs PHEMT Using Liquid Phase Deposited TiO2 as a Gate Dielectric

Reduced Subthreshold Characteristics and Flicker Noise of an AlGaAs/InGaAs PHEMT Using Liquid Phase Deposited TiO2 as a Gate Dielectric

This study presents the fabrication and improved properties of an AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) using liquid phase deposited titanium dioxide (LPD-TiO2) as a gate dielectric. Sulfur pretreatment and postoxidation rapid thermal ann...

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Bibliographic Details
Main Authors: Kai-Yuen Lam, Jung-Sheng Huang, Yong-Jie Zou, Kuan-Wei Lee, Yeong-Her Wang
Format: Article
Language:English
Published: MDPI AG 2016-10-01
Series:Materials
Subjects:
AlGaAs
pseudomorphic high-electron-mobility transistor (PHEMT)
TiO2
flicker noise
Online Access:http://www.mdpi.com/1996-1944/9/11/861

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