Quantum Yield of Reflection Mode Varied Doping GaN Photocathode
Using the NEA photocathode activation and evaluation experiment system, the varied doping GaN photocathode has been activated and evaluated. According to the diffusion and orientation drifting equation, the quantum yield formula of reflection mode varied doping NEA GaN photocathode was gotten. The f...
Main Authors: | Qiao Jianliang, Li Xiangjiang, Niu Jun, Gao Youtang |
---|---|
Format: | Article |
Language: | English |
Published: |
EDP Sciences
2016-01-01
|
Series: | MATEC Web of Conferences |
Online Access: | http://dx.doi.org/10.1051/matecconf/20166702019 |
Similar Items
-
Study of Negative Electron Affinity Property for Varied Doping GaN Photocathode
by: Qiao Jianliang, et al.
Published: (2016-01-01) -
Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness
by: Xiaowei Wang, et al.
Published: (2020-10-01) -
High quantum efficiency GaAs photocathodes activated with Cs, O2, and Te
by: Jyoti Biswas, et al.
Published: (2021-02-01) -
Impact of Surface Chemistry and Doping Concentrations on Biofunctionalization of GaN/Ga‒In‒N Quantum Wells
by: Nilanjon Naskar, et al.
Published: (2020-07-01) -
Nano-structure Studies on Silicon-doped InGaN/GaN Quantum Wells
by: En-Chiang Lin, et al.
Published: (2003)