Quantum Yield of Reflection Mode Varied Doping GaN Photocathode

Using the NEA photocathode activation and evaluation experiment system, the varied doping GaN photocathode has been activated and evaluated. According to the diffusion and orientation drifting equation, the quantum yield formula of reflection mode varied doping NEA GaN photocathode was gotten. The f...

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Main Authors: Qiao Jianliang, Li Xiangjiang, Niu Jun, Gao Youtang
Format: Article
Language:English
Published: EDP Sciences 2016-01-01
Series:MATEC Web of Conferences
Online Access:http://dx.doi.org/10.1051/matecconf/20166702019
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spelling doaj-29386cb4eae04cd888659110e8c05ebd2021-03-02T01:20:24ZengEDP SciencesMATEC Web of Conferences2261-236X2016-01-01670201910.1051/matecconf/20166702019matecconf_smae2016_02019Quantum Yield of Reflection Mode Varied Doping GaN PhotocathodeQiao Jianliang0Li Xiangjiang1Niu Jun2Gao Youtang3School of Electronic and Electrical Engineering, Nanyang Institute of TechnologySchool of Electronic and Electrical Engineering, Nanyang Institute of TechnologySchool of Electronic and Electrical Engineering, Nanyang Institute of TechnologySchool of Electronic and Electrical Engineering, Nanyang Institute of TechnologyUsing the NEA photocathode activation and evaluation experiment system, the varied doping GaN photocathode has been activated and evaluated. According to the diffusion and orientation drifting equation, the quantum yield formula of reflection mode varied doping NEA GaN photocathode was gotten. The factors affecting the quantum efficiency of varied doping GaN photocathode were studied. For the varied doping GaN photocathode, the quantum efficiency is mainly decided by the escape probability of electron P, he absorption coefficient α, the electron diffuse length LD, the reflectance of cathode materials for incident light R, emission layer thickness Te and the inside electric field E. The experiment and analysis results show: With the directional inside electric field in the bulk, the varied doping NEA GaN photocathode has better photoemission performance than uniform doping photocathode.http://dx.doi.org/10.1051/matecconf/20166702019
collection DOAJ
language English
format Article
sources DOAJ
author Qiao Jianliang
Li Xiangjiang
Niu Jun
Gao Youtang
spellingShingle Qiao Jianliang
Li Xiangjiang
Niu Jun
Gao Youtang
Quantum Yield of Reflection Mode Varied Doping GaN Photocathode
MATEC Web of Conferences
author_facet Qiao Jianliang
Li Xiangjiang
Niu Jun
Gao Youtang
author_sort Qiao Jianliang
title Quantum Yield of Reflection Mode Varied Doping GaN Photocathode
title_short Quantum Yield of Reflection Mode Varied Doping GaN Photocathode
title_full Quantum Yield of Reflection Mode Varied Doping GaN Photocathode
title_fullStr Quantum Yield of Reflection Mode Varied Doping GaN Photocathode
title_full_unstemmed Quantum Yield of Reflection Mode Varied Doping GaN Photocathode
title_sort quantum yield of reflection mode varied doping gan photocathode
publisher EDP Sciences
series MATEC Web of Conferences
issn 2261-236X
publishDate 2016-01-01
description Using the NEA photocathode activation and evaluation experiment system, the varied doping GaN photocathode has been activated and evaluated. According to the diffusion and orientation drifting equation, the quantum yield formula of reflection mode varied doping NEA GaN photocathode was gotten. The factors affecting the quantum efficiency of varied doping GaN photocathode were studied. For the varied doping GaN photocathode, the quantum efficiency is mainly decided by the escape probability of electron P, he absorption coefficient α, the electron diffuse length LD, the reflectance of cathode materials for incident light R, emission layer thickness Te and the inside electric field E. The experiment and analysis results show: With the directional inside electric field in the bulk, the varied doping NEA GaN photocathode has better photoemission performance than uniform doping photocathode.
url http://dx.doi.org/10.1051/matecconf/20166702019
work_keys_str_mv AT qiaojianliang quantumyieldofreflectionmodevarieddopingganphotocathode
AT lixiangjiang quantumyieldofreflectionmodevarieddopingganphotocathode
AT niujun quantumyieldofreflectionmodevarieddopingganphotocathode
AT gaoyoutang quantumyieldofreflectionmodevarieddopingganphotocathode
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