Influence of Morphological Changes in a Source Material on the Growth Interface of 4H-SiC Single Crystals

Influence of Morphological Changes in a Source Material on the Growth Interface of 4H-SiC Single Crystals

In this study, the change of mass distribution in a source material is tracked using an in situ computer tomography (CT) setup during the bulk growth of 4H- silicon carbide (SiC) via physical vapor depostion (PVT). The changing properties of the source material due to recrystallization and densifica...

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Bibliographic Details
Main Authors: Matthias Arzig, Johannes Steiner, Michael Salamon, Norman Uhlmann, Peter J. Wellmann
Format: Article
Language:English
Published: MDPI AG 2019-08-01
Series:Materials
Subjects:
in-situ CT
Laser flash
thermal conductivity
source material
numerical modelling
Computer Tomography
supersaturation
growth kinetics
Online Access:https://www.mdpi.com/1996-1944/12/16/2591

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