Heat Exchange Between Electrons and Phonons in Nanosystems at Sub-Kelvin Temperatures

Ultra-sensitive nanoscopic detectors for electromagnetic radiation consist of thin metallic films deposited on dielectric membranes. The metallic films, of thickness d of the order of 10 nm, form the thermal sensing element (TSE), which absorbs the incident radiation and measures its power flux or t...

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Main Authors: Anghel Dragoş-Victor, Cojocaru Sergiu
Format: Article
Language:English
Published: EDP Sciences 2018-01-01
Series:EPJ Web of Conferences
Online Access:https://doi.org/10.1051/epjconf/201817302002
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spelling doaj-28efdf25cd5847bb9fd2390a3e6a5f782021-08-02T06:14:29ZengEDP SciencesEPJ Web of Conferences2100-014X2018-01-011730200210.1051/epjconf/201817302002epjconf_mmcp2018_02002Heat Exchange Between Electrons and Phonons in Nanosystems at Sub-Kelvin TemperaturesAnghel Dragoş-VictorCojocaru SergiuUltra-sensitive nanoscopic detectors for electromagnetic radiation consist of thin metallic films deposited on dielectric membranes. The metallic films, of thickness d of the order of 10 nm, form the thermal sensing element (TSE), which absorbs the incident radiation and measures its power flux or the energies of individual photons. To achieve the sensitivity required for astronomical observations, the TSE works at temperatures of the order of 0.1 K. The dielectric membranes are used as support and for thermal insulation of the TSE and are of thickness L − d of the order of 100 nm (L being the total thickness of the system). In such conditions, the phonon gas in the detector assumes a quasi-two-dimensional distribution, whereas quantization of the electrons wavenumbers in the direction perpendicular to the film surfaces leads to the formation of quasi two-dimensional electronic sub-bands. The heat exchange between electrons and phonons has an important contribution to the performance of the device and is dominated by the interaction between the electrons and the antisymmetric acoustic phonons.https://doi.org/10.1051/epjconf/201817302002
collection DOAJ
language English
format Article
sources DOAJ
author Anghel Dragoş-Victor
Cojocaru Sergiu
spellingShingle Anghel Dragoş-Victor
Cojocaru Sergiu
Heat Exchange Between Electrons and Phonons in Nanosystems at Sub-Kelvin Temperatures
EPJ Web of Conferences
author_facet Anghel Dragoş-Victor
Cojocaru Sergiu
author_sort Anghel Dragoş-Victor
title Heat Exchange Between Electrons and Phonons in Nanosystems at Sub-Kelvin Temperatures
title_short Heat Exchange Between Electrons and Phonons in Nanosystems at Sub-Kelvin Temperatures
title_full Heat Exchange Between Electrons and Phonons in Nanosystems at Sub-Kelvin Temperatures
title_fullStr Heat Exchange Between Electrons and Phonons in Nanosystems at Sub-Kelvin Temperatures
title_full_unstemmed Heat Exchange Between Electrons and Phonons in Nanosystems at Sub-Kelvin Temperatures
title_sort heat exchange between electrons and phonons in nanosystems at sub-kelvin temperatures
publisher EDP Sciences
series EPJ Web of Conferences
issn 2100-014X
publishDate 2018-01-01
description Ultra-sensitive nanoscopic detectors for electromagnetic radiation consist of thin metallic films deposited on dielectric membranes. The metallic films, of thickness d of the order of 10 nm, form the thermal sensing element (TSE), which absorbs the incident radiation and measures its power flux or the energies of individual photons. To achieve the sensitivity required for astronomical observations, the TSE works at temperatures of the order of 0.1 K. The dielectric membranes are used as support and for thermal insulation of the TSE and are of thickness L − d of the order of 100 nm (L being the total thickness of the system). In such conditions, the phonon gas in the detector assumes a quasi-two-dimensional distribution, whereas quantization of the electrons wavenumbers in the direction perpendicular to the film surfaces leads to the formation of quasi two-dimensional electronic sub-bands. The heat exchange between electrons and phonons has an important contribution to the performance of the device and is dominated by the interaction between the electrons and the antisymmetric acoustic phonons.
url https://doi.org/10.1051/epjconf/201817302002
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