THE USE OF THE FINITE DIFFERENCE METHOD FOR CALCULATION OF ELECTRONIC STATES IN MIS-STRUCTURE WITH SINGLE DONOR 1
Numerical modeling of electronic state evolution due to non-uniform external electric field in the structure metal-insulator-semiconductor with solitary donor center is carried out. Considering a nanometer disc-shaped gate as a source of the electric field, the problem for the Laplace equation in mu...
| Main Authors: | , , |
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| Format: | Article |
| Language: | Russian |
| Published: |
The United Institute of Informatics Problems of the National Academy of Sciences of Belarus
2018-03-01
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| Series: | Informatika |
| Subjects: | |
| Online Access: | https://inf.grid.by/jour/article/view/312 |