A Scalable Bidimensional Randomization Scheme for TLC 3D NAND Flash Memories

• Main Authors: Michele Favalli, Cristian Zambelli, Alessia Marelli, Rino Micheloni, Piero Olivo
• Format: Article
• Language: English
• Published: MDPI AG 2021-06-01
• Series: Micromachines
• Subjects: 3D NAND Flash; RBER; reliability; flash signal processing; randomization scheme
• Online Access: https://www.mdpi.com/2072-666X/12/7/759

Data randomization has been a widely adopted Flash Signal Processing technique for reducing or suppressing errors since the inception of mass storage platforms based on planar NAND Flash technology. However, the paradigm change represented by the 3D memory integration concept has complicated the randomization task due to the increased dimensions of the memory array, especially along the bitlines. In this work, we propose an easy to implement, cost effective, and fully scalable with memory dimensions, randomization scheme that guarantees optimal randomization along the wordline and the bitline dimensions. At the same time, we guarantee an upper bound on the maximum length of consecutive ones and zeros along the bitline to improve the memory reliability. Our method has been validated on commercial off-the-shelf TLC 3D NAND Flash memory with respect to the Raw Bit Error Rate metric extracted in different memory working conditions.