Site-Control of InAs/GaAs Quantum Dots with Indium-Assisted Deoxidation

Site-Control of InAs/GaAs Quantum Dots with Indium-Assisted Deoxidation

Site-controlled epitaxial growth of InAs quantum dots on GaAs substrates patterned with periodic nanohole arrays relies on the deterministic nucleation of dots into the holes. In the ideal situation, each hole should be occupied exactly by one single dot, with no nucleation onto planar areas. Howeve...

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Bibliographic Details
Main Authors: Sajid Hussain, Alessandro Pozzato, Massimo Tormen, Valentina Zannier, Giorgio Biasiol
Format: Article
Language:English
Published: MDPI AG 2016-03-01
Series:Materials
Subjects:
molecular beam epitaxy
quantum dots
nanostructures
nanoimprint lithography
self-assembly
compound semiconductors
GaAs
InAs
81.07.Ta
81.15.Hi
68.35.bg
81.16.Nd
Online Access:http://www.mdpi.com/1996-1944/9/3/208

Internet

http://www.mdpi.com/1996-1944/9/3/208

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