Charge carrier mobility and electronic properties of Al(Op)3: impact of excimer formation

We have studied the electronic properties and the charge carrier mobility of the organic semiconductor tris(1-oxo-1H-phenalen-9-olate)aluminium(III) (Al(Op)3) both experimentally and theoretically. We experimentally estimated the HOMO and LUMO energy levels to be −5.93 and −3.26 eV, respectively, wh...

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Main Authors: Andrea Magri, Pascal Friederich, Bernhard Schäfer, Valeria Fattori, Xiangnan Sun, Timo Strunk, Velimir Meded, Luis E. Hueso, Wolfgang Wenzel, Mario Ruben
Format: Article
Language:English
Published: Beilstein-Institut 2015-05-01
Series:Beilstein Journal of Nanotechnology
Subjects:
Online Access:https://doi.org/10.3762/bjnano.6.112
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spelling doaj-27f7728cf05349bc9d8cc5426c25ded72020-11-24T23:55:39ZengBeilstein-InstitutBeilstein Journal of Nanotechnology2190-42862015-05-01611107111510.3762/bjnano.6.1122190-4286-6-112Charge carrier mobility and electronic properties of Al(Op)3: impact of excimer formationAndrea Magri0Pascal Friederich1Bernhard Schäfer2Valeria Fattori3Xiangnan Sun4Timo Strunk5Velimir Meded6Luis E. Hueso7Wolfgang Wenzel8Mario Ruben9Institute of Nanotechnology, Karlsruhe Institute of Technology, D-76344 Eggenstein-Leopoldshafen, GermanyInstitute of Nanotechnology, Karlsruhe Institute of Technology, D-76344 Eggenstein-Leopoldshafen, GermanyInstitute of Nanotechnology, Karlsruhe Institute of Technology, D-76344 Eggenstein-Leopoldshafen, GermanyIstituto per la Sintesi Organica e Fotoreattivitá, Consiglio Nazionale della Ricerca, I-40129 Bologna, ItalyCIC nanoGUNE Consolider, E-20018 Donostia – San Sebastian, SpainNanomatch, Hermann-von-Helmholtz-Platz 1, D-76344 Eggenstein-Leopoldshafen, GermanyInstitute of Nanotechnology, Karlsruhe Institute of Technology, D-76344 Eggenstein-Leopoldshafen, GermanyCIC nanoGUNE Consolider, E-20018 Donostia – San Sebastian, SpainInstitute of Nanotechnology, Karlsruhe Institute of Technology, D-76344 Eggenstein-Leopoldshafen, GermanyInstitute of Nanotechnology, Karlsruhe Institute of Technology, D-76344 Eggenstein-Leopoldshafen, GermanyWe have studied the electronic properties and the charge carrier mobility of the organic semiconductor tris(1-oxo-1H-phenalen-9-olate)aluminium(III) (Al(Op)3) both experimentally and theoretically. We experimentally estimated the HOMO and LUMO energy levels to be −5.93 and −3.26 eV, respectively, which were close to the corresponding calculated values. Al(Op)3 was successfully evaporated onto quartz substrates and was clearly identified in the absorption spectra of both the solution and the thin film. A structured steady state fluorescence emission was detected in solution, whereas a broad, red-shifted emission was observed in the thin film. This indicates the formation of excimers in the solid state, which is crucial for the transport properties. The incorporation of Al(Op)3 into organic thin film transistors (TFTs) was performed in order to measure the charge carrier mobility. The experimental setup detected no electron mobility, while a hole mobility between 0.6 × 10−6 and 2.1 × 10−6 cm2·V−1·s−1 was measured. Theoretical simulations, on the other hand, predicted an electron mobility of 9.5 × 10−6 cm2·V−1·s−1 and a hole mobility of 1.4 × 10−4 cm2·V−1·s−1. The theoretical simulation for the hole mobility predicted an approximately one order of magnitude higher hole mobility than was observed in the experiment, which is considered to be in good agreement. The result for the electron mobility was, on the other hand, unexpected, as both the calculated electron mobility and chemical common sense (based on the capability of extended aromatic structures to efficiently accept and delocalize additional electrons) suggest more robust electron charge transport properties. This discrepancy is explained by the excimer formation, whose inclusion in the multiscale simulation workflow is expected to bring the theoretical simulation and experiment into agreement.https://doi.org/10.3762/bjnano.6.112charge carrier mobilityHOMO–LUMO energy levelsphotophysical characterizationTFT devicestris-(1-oxo-1H-phenalen-9-olate)aluminum(III)
collection DOAJ
language English
format Article
sources DOAJ
author Andrea Magri
Pascal Friederich
Bernhard Schäfer
Valeria Fattori
Xiangnan Sun
Timo Strunk
Velimir Meded
Luis E. Hueso
Wolfgang Wenzel
Mario Ruben
spellingShingle Andrea Magri
Pascal Friederich
Bernhard Schäfer
Valeria Fattori
Xiangnan Sun
Timo Strunk
Velimir Meded
Luis E. Hueso
Wolfgang Wenzel
Mario Ruben
Charge carrier mobility and electronic properties of Al(Op)3: impact of excimer formation
Beilstein Journal of Nanotechnology
charge carrier mobility
HOMO–LUMO energy levels
photophysical characterization
TFT devices
tris-(1-oxo-1H-phenalen-9-olate)aluminum(III)
author_facet Andrea Magri
Pascal Friederich
Bernhard Schäfer
Valeria Fattori
Xiangnan Sun
Timo Strunk
Velimir Meded
Luis E. Hueso
Wolfgang Wenzel
Mario Ruben
author_sort Andrea Magri
title Charge carrier mobility and electronic properties of Al(Op)3: impact of excimer formation
title_short Charge carrier mobility and electronic properties of Al(Op)3: impact of excimer formation
title_full Charge carrier mobility and electronic properties of Al(Op)3: impact of excimer formation
title_fullStr Charge carrier mobility and electronic properties of Al(Op)3: impact of excimer formation
title_full_unstemmed Charge carrier mobility and electronic properties of Al(Op)3: impact of excimer formation
title_sort charge carrier mobility and electronic properties of al(op)3: impact of excimer formation
publisher Beilstein-Institut
series Beilstein Journal of Nanotechnology
issn 2190-4286
publishDate 2015-05-01
description We have studied the electronic properties and the charge carrier mobility of the organic semiconductor tris(1-oxo-1H-phenalen-9-olate)aluminium(III) (Al(Op)3) both experimentally and theoretically. We experimentally estimated the HOMO and LUMO energy levels to be −5.93 and −3.26 eV, respectively, which were close to the corresponding calculated values. Al(Op)3 was successfully evaporated onto quartz substrates and was clearly identified in the absorption spectra of both the solution and the thin film. A structured steady state fluorescence emission was detected in solution, whereas a broad, red-shifted emission was observed in the thin film. This indicates the formation of excimers in the solid state, which is crucial for the transport properties. The incorporation of Al(Op)3 into organic thin film transistors (TFTs) was performed in order to measure the charge carrier mobility. The experimental setup detected no electron mobility, while a hole mobility between 0.6 × 10−6 and 2.1 × 10−6 cm2·V−1·s−1 was measured. Theoretical simulations, on the other hand, predicted an electron mobility of 9.5 × 10−6 cm2·V−1·s−1 and a hole mobility of 1.4 × 10−4 cm2·V−1·s−1. The theoretical simulation for the hole mobility predicted an approximately one order of magnitude higher hole mobility than was observed in the experiment, which is considered to be in good agreement. The result for the electron mobility was, on the other hand, unexpected, as both the calculated electron mobility and chemical common sense (based on the capability of extended aromatic structures to efficiently accept and delocalize additional electrons) suggest more robust electron charge transport properties. This discrepancy is explained by the excimer formation, whose inclusion in the multiscale simulation workflow is expected to bring the theoretical simulation and experiment into agreement.
topic charge carrier mobility
HOMO–LUMO energy levels
photophysical characterization
TFT devices
tris-(1-oxo-1H-phenalen-9-olate)aluminum(III)
url https://doi.org/10.3762/bjnano.6.112
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