Probing the dopant profile in nanoscale devices by low temperature electrostatic force microscopy
Probing dopant distributions in nanoscale devices may find important applications in failure analysis. In this work, we employed cryogenic electrostatic force microscopy (EFM) to probe the dopant distribution in a lateral nanoscale bipolar junction transistor formed by ion implantations. The photocu...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-12-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5133095 |