Influence of dislocation density on internal quantum efficiency of GaN-based semiconductors

Influence of dislocation density on internal quantum efficiency of GaN-based semiconductors

By considering the effects of stress fields coming from lattice distortion as well as charge fields coming from line charges at edge dislocation cores on radiative recombination of exciton, a model of carriers’ radiative and non-radiative recombination has been established in GaN-based semiconductor...

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Main Authors: Jiadong Yu, Zhibiao Hao, Linsen Li, Lai Wang, Yi Luo, Jian Wang, Changzheng Sun, Yanjun Han, Bing Xiong, Hongtao Li
Format: Article
Language:English
Published: AIP Publishing LLC 2017-03-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4979504
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spelling doaj-279d689e6c3942ee806c4d16762d0f9b2020-11-25T00:15:59ZengAIP Publishing LLCAIP Advances2158-32262017-03-0173035321035321-910.1063/1.4979504068703ADVInfluence of dislocation density on internal quantum efficiency of GaN-based semiconductorsJiadong Yu0Zhibiao Hao1Linsen Li2Lai Wang3Yi Luo4Jian Wang5Changzheng Sun6Yanjun Han7Bing Xiong8Hongtao Li9Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, ChinaTsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, ChinaTsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, ChinaTsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, ChinaTsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, ChinaTsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, ChinaTsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, ChinaTsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, ChinaTsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, ChinaTsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, ChinaBy considering the effects of stress fields coming from lattice distortion as well as charge fields coming from line charges at edge dislocation cores on radiative recombination of exciton, a model of carriers’ radiative and non-radiative recombination has been established in GaN-based semiconductors with certain dislocation density. Using vector average of the stress fields and the charge fields, the relationship between dislocation density and the internal quantum efficiency (IQE) is deduced. Combined with related experimental results, this relationship is fitted well to the trend of IQEs of bulk GaN changing with screw and edge dislocation density, meanwhile its simplified form is fitted well to the IQEs of AlGaN multiple quantum well LEDs with varied threading dislocation densities but the same light emission wavelength. It is believed that this model, suitable for different epitaxy platforms such as MOCVD and MBE, can be used to predict to what extent the luminous efficiency of GaN-based semiconductors can still maintain when the dislocation density increases, so as to provide a reasonable rule of thumb for optimizing the epitaxial growth of GaN-based devices.http://dx.doi.org/10.1063/1.4979504
collection DOAJ
language English
format Article
sources DOAJ
author Jiadong Yu
Zhibiao Hao
Linsen Li
Lai Wang
Yi Luo
Jian Wang
Changzheng Sun
Yanjun Han
Bing Xiong
Hongtao Li
spellingShingle Jiadong Yu
Zhibiao Hao
Linsen Li
Lai Wang
Yi Luo
Jian Wang
Changzheng Sun
Yanjun Han
Bing Xiong
Hongtao Li
Influence of dislocation density on internal quantum efficiency of GaN-based semiconductors
AIP Advances
author_facet Jiadong Yu
Zhibiao Hao
Linsen Li
Lai Wang
Yi Luo
Jian Wang
Changzheng Sun
Yanjun Han
Bing Xiong
Hongtao Li
author_sort Jiadong Yu
title Influence of dislocation density on internal quantum efficiency of GaN-based semiconductors
title_short Influence of dislocation density on internal quantum efficiency of GaN-based semiconductors
title_full Influence of dislocation density on internal quantum efficiency of GaN-based semiconductors
title_fullStr Influence of dislocation density on internal quantum efficiency of GaN-based semiconductors
title_full_unstemmed Influence of dislocation density on internal quantum efficiency of GaN-based semiconductors
title_sort influence of dislocation density on internal quantum efficiency of gan-based semiconductors
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2017-03-01
description By considering the effects of stress fields coming from lattice distortion as well as charge fields coming from line charges at edge dislocation cores on radiative recombination of exciton, a model of carriers’ radiative and non-radiative recombination has been established in GaN-based semiconductors with certain dislocation density. Using vector average of the stress fields and the charge fields, the relationship between dislocation density and the internal quantum efficiency (IQE) is deduced. Combined with related experimental results, this relationship is fitted well to the trend of IQEs of bulk GaN changing with screw and edge dislocation density, meanwhile its simplified form is fitted well to the IQEs of AlGaN multiple quantum well LEDs with varied threading dislocation densities but the same light emission wavelength. It is believed that this model, suitable for different epitaxy platforms such as MOCVD and MBE, can be used to predict to what extent the luminous efficiency of GaN-based semiconductors can still maintain when the dislocation density increases, so as to provide a reasonable rule of thumb for optimizing the epitaxial growth of GaN-based devices.
url http://dx.doi.org/10.1063/1.4979504
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AT zhibiaohao influenceofdislocationdensityoninternalquantumefficiencyofganbasedsemiconductors
AT linsenli influenceofdislocationdensityoninternalquantumefficiencyofganbasedsemiconductors
AT laiwang influenceofdislocationdensityoninternalquantumefficiencyofganbasedsemiconductors
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