Mean volume reflection angle

• Main Author: M. V. Bondarenco
• Format: Article
• Language: English
• Published: American Physical Society 2020-03-01
• Series: Physical Review Accelerators and Beams
• Online Access: http://doi.org/10.1103/PhysRevAccelBeams.23.031303

The mean volume reflection angle of a high-energy charged particle passing through a bent crystal is expressed as an integral involving the effective interplanar potential over a single crystal period. Implications for positively and negatively charged particles, and silicon crystal orientations (110) and (111) are discussed. A generic next-to-leading-order expansion in the ratio E/R of the particle energy E to the crystal bending radius R is given. For positively charged particles, the dependence of the mean volume reflection angle on E/R proves to be approximately linear, whereas for negatively charged particles the linear behavior is modified by an E/R-dependent logarithmic factor. Up-to-date experimental data are confronted with predictions based on commonly used atomic potentials.