Mean volume reflection angle
The mean volume reflection angle of a high-energy charged particle passing through a bent crystal is expressed as an integral involving the effective interplanar potential over a single crystal period. Implications for positively and negatively charged particles, and silicon crystal orientations (11...
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| Format: | Article |
| Language: | English |
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American Physical Society
2020-03-01
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| Series: | Physical Review Accelerators and Beams |
| Online Access: | http://doi.org/10.1103/PhysRevAccelBeams.23.031303 |
| Summary: | The mean volume reflection angle of a high-energy charged particle passing through a bent crystal is expressed as an integral involving the effective interplanar potential over a single crystal period. Implications for positively and negatively charged particles, and silicon crystal orientations (110) and (111) are discussed. A generic next-to-leading-order expansion in the ratio E/R of the particle energy E to the crystal bending radius R is given. For positively charged particles, the dependence of the mean volume reflection angle on E/R proves to be approximately linear, whereas for negatively charged particles the linear behavior is modified by an E/R-dependent logarithmic factor. Up-to-date experimental data are confronted with predictions based on commonly used atomic potentials. |
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| ISSN: | 2469-9888 |